Next Article in Journal
Six-Degree-of-Freedom Sensor Fish Design and Instrumentation
Next Article in Special Issue
Application of Design of Experiment Method for Thrust Force Minimization in Step-feed Micro Drilling
Previous Article in Journal
A Novel Pulse Measurement System by Using Laser Triangulation and a CMOS Image Sensor
Previous Article in Special Issue
Three Cavity Tunable MEMS Fabry Perot Interferometer
Article Menu

Export Article

Open AccessArticle
Sensors 2007, 7(12), 3386-3398;

Modeling and Fabrication of Micro FET Pressure Sensor with Circuits

Department of Mechanical Engineering, National Chung Hsing University, 250 Kuo-Kuang Rd., Taichung, 402 Taiwan
Author to whom correspondence should be addressed.
Received: 19 November 2007 / Accepted: 18 December 2007 / Published: 19 November 2007
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering)
Full-Text   |   PDF [2328 KB, uploaded 21 June 2014]


This paper presents the simulation, fabrication and characterization of a microFET (field effect transistor) pressure sensor with readout circuits. The pressure sensorincludes 16 sensing cells in parallel. Each sensing cell that is circular shape is composed ofan MOS (metal oxide semiconductor) and a suspended membrane, which the suspendedmembrane is the movable gate of the MOS. The CoventorWare is used to simulate thebehaviors of the pressure sensor, and the HSPICE is employed to evaluate the characteristicsof the circuits. The pressure sensor integrated with circuits is manufactured using thecommercial 0.35 μm CMOS (complementary metal oxide semiconductor) process and apost-process. In order to obtain the suspended membranes, the pressure sensor requires apost-CMOS process. The post-process adopts etchants to etch the sacrificial layers in thepressure sensors to release the suspended membranes, and then the etch holes in the pressuresensor are sealed by LPCVD (low pressure chemical vapor deposition) parylene. Thepressure sensor produces a change in current when applying a pressure to the sensing cells.The circuits are utilized to convert the current variation of the pressure sensor into thevoltage output. Experimental results show that the pressure sensor has a sensitivity of 0.032mV/kPa in the pressure range of 0-500 kPa. View Full-Text
Keywords: micro pressure sensor; CMOS-MEMS; readout circuit. micro pressure sensor; CMOS-MEMS; readout circuit.
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Dai, C.-L.; Tai, Y.-W.; Kao, P.-H. Modeling and Fabrication of Micro FET Pressure Sensor with Circuits. Sensors 2007, 7, 3386-3398.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top