A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity
AbstractIn this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. View Full-Text
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Zhang, F.; Niu, H. A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity. Sensors 2016, 16, 999.
Zhang F, Niu H. A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity. Sensors. 2016; 16(7):999.Chicago/Turabian Style
Zhang, Fan; Niu, Hanben. 2016. "A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity." Sensors 16, no. 7: 999.
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