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Sensors 2016, 16(4), 450;

Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS

Minghsin University of Science and Technology, Xinfeng 30401, Taiwan
Treasure Giant Technology Inc., Hsinchu City 30068, Taiwan
Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
National Nano Device Laboratories, Hsinchu 30078, Taiwan
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Alberto Vallan
Received: 3 February 2016 / Revised: 18 March 2016 / Accepted: 23 March 2016 / Published: 29 March 2016
Full-Text   |   PDF [1530 KB, uploaded 29 March 2016]   |  


Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future. View Full-Text
Keywords: SONOS; NVM; sensor; gamma ray SONOS; NVM; sensor; gamma ray

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Hsieh, W.-C.; Lee, H.-T.D.; Jong, F.-C.; Wu, S.-C. Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS. Sensors 2016, 16, 450.

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