An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device
AbstractMetal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of the ionization radiation sensing response. The change of threshold voltage VT for a MAHAOS device after gamma ray exposure had a strong correlation to the total ionization dose (TID) of gamma radiation up to at least 5 Mrad TID. In this paper, the gamma radiation response performances of the pre-programmed and virgin (non-pre-programmed) MAHAOS devices are presented. The experimental data show that the change of VT for the pre-programmed MAHAOS device with gamma irradiation is very significant. The data of pre-programmed MAHAOS devices written by 5 Mrad TID of gamma radiation was also stable for a long time with data storage. The sensing of gamma radiation by pre-programmed MAHAOS devices with high k stack gate dielectric reported in this study has demonstrated their potential application for non-volatile ionizing radiation sensing technology in the future. View Full-Text
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Hsieh, W.-C.; Lee, H.-T.D.; Jong, F.-C. An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device. Sensors 2014, 14, 14553-14566.
Hsieh W-C, Lee H-TD, Jong F-C. An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device. Sensors. 2014; 14(8):14553-14566.Chicago/Turabian Style
Hsieh, Wen-Ching; Lee, Hao-Tien D.; Jong, Fuh-Cheng. 2014. "An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device." Sensors 14, no. 8: 14553-14566.