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Open AccessArticle

A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

by Junjie Wu 1,2, Lihua Lei 2, Xin Chen 1,*, Xiaoyu Cai 2, Yuan Li 2 and Tao Han 1
School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai 200240, China
Shanghai Institute of Measurement and Testing Technology, National Center of Measurement and Testing for East China, National Center of Testing Technology, No. 1500, Zhangheng Road, Shanghai 201203, China
Author to whom correspondence should be addressed.
Sensors 2014, 14(11), 20533-20542;
Received: 28 August 2014 / Revised: 21 October 2014 / Accepted: 22 October 2014 / Published: 30 October 2014
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering)
For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction. View Full-Text
Keywords: dimensional metrology; piezoresistor; MEMS; microtactile sensor dimensional metrology; piezoresistor; MEMS; microtactile sensor
MDPI and ACS Style

Wu, J.; Lei, L.; Chen, X.; Cai, X.; Li, Y.; Han, T. A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology. Sensors 2014, 14, 20533-20542.

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