Next Article in Journal
Toward Smart Aerospace Structures: Design of a Piezoelectric Sensor and Its Analog Interface for Flaw Detection
Next Article in Special Issue
Improving the Precision and Speed of Euler Angles Computation from Low-Cost Rotation Sensor Data
Previous Article in Journal
Fabrication and Evaluation of a Micro(Bio)Sensor Array Chip for Multiple Parallel Measurements of Important Cell Biomarkers
Previous Article in Special Issue
Multifrequency Excitation Method for Rapid and Accurate Dynamic Test of Micromachined Gyroscope Chips
Article Menu

Export Article

Open AccessArticle
Sensors 2014, 14(11), 20533-20542;

A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai 200240, China
Shanghai Institute of Measurement and Testing Technology, National Center of Measurement and Testing for East China, National Center of Testing Technology, No. 1500, Zhangheng Road, Shanghai 201203, China
Author to whom correspondence should be addressed.
Received: 28 August 2014 / Revised: 21 October 2014 / Accepted: 22 October 2014 / Published: 30 October 2014
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering)
PDF [1427 KB, uploaded 30 October 2014]


For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction. View Full-Text
Keywords: dimensional metrology; piezoresistor; MEMS; microtactile sensor dimensional metrology; piezoresistor; MEMS; microtactile sensor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Wu, J.; Lei, L.; Chen, X.; Cai, X.; Li, Y.; Han, T. A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology. Sensors 2014, 14, 20533-20542.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top