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Sensors 2013, 13(9), 12648-12662;

A 0.0016 mm2 0.64 nJ Leakage-Based CMOS Temperature Sensor

Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Avenida Complutense 30, 28040 Madrid, Spain
Author to whom correspondence should be addressed.
Received: 1 August 2013 / Revised: 3 September 2013 / Accepted: 9 September 2013 / Published: 18 September 2013
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Spain 2013)
Full-Text   |   PDF [1813 KB, uploaded 21 June 2014]


This paper presents a CMOS temperature sensor based on the thermal dependencies of the leakage currents targeting the 65 nm node. To compensate for the effect of process fluctuations, the proposed sensor realizes the ratio of two measures of the time it takes a capacitor to discharge through a transistor in the subthreshold regime. Furthermore, a novel charging mechanism for the capacitor is proposed to further increase the robustness against fabrication variability. The sensor, including digitization and interfacing, occupies 0.0016 mm2 and has an energy consumption of 47.7–633 pJ per sample. The resolution of the sensor is 0.28 °C, and the 3σ inaccuracy over the range 40–110 °C is 1.17 °C. View Full-Text
Keywords: temperature sensor; CMOS; ratio-based; leakage; DTM (Dynamic Thermal Management) temperature sensor; CMOS; ratio-based; leakage; DTM (Dynamic Thermal Management)
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Ituero, P.; López-Vallejo, M.; López-Barrio, C. A 0.0016 mm2 0.64 nJ Leakage-Based CMOS Temperature Sensor. Sensors 2013, 13, 12648-12662.

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