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Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

1
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
2
Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
*
Author to whom correspondence should be addressed.
Sensors 2011, 11(8), 8127-8142; https://doi.org/10.3390/s110808127
Received: 15 July 2011 / Revised: 8 August 2011 / Accepted: 12 August 2011 / Published: 18 August 2011
(This article belongs to the Section Chemical Sensors)
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. View Full-Text
Keywords: AlGaAs/GaAs; HEMT; Schottky diode; RF power detector; rectenna AlGaAs/GaAs; HEMT; Schottky diode; RF power detector; rectenna
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MDPI and ACS Style

Hashim, A.M.; Mustafa, F.; Rahman, S.F.A.; Rahman, A.R.A. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications. Sensors 2011, 11, 8127-8142. https://doi.org/10.3390/s110808127

AMA Style

Hashim AM, Mustafa F, Rahman SFA, Rahman ARA. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications. Sensors. 2011; 11(8):8127-8142. https://doi.org/10.3390/s110808127

Chicago/Turabian Style

Hashim, Abdul Manaf, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, and Abdul Rahim Abdul Rahman. 2011. "Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications" Sensors 11, no. 8: 8127-8142. https://doi.org/10.3390/s110808127

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