ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4
Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
Author to whom correspondence should be addressed.
Received: 7 January 2018 / Revised: 7 February 2018 / Accepted: 9 February 2018 / Published: 13 February 2018
Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−x
films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to
V. A non-electrostatic mechanism takes over for gate voltages below
V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2
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Atesci, H.; Gelling, W.; Coneri, F.; Hilgenkamp, H.; van Ruitenbeek, J.M. ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4. Int. J. Mol. Sci. 2018, 19, 566.
Atesci H, Gelling W, Coneri F, Hilgenkamp H, van Ruitenbeek JM. ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4. International Journal of Molecular Sciences. 2018; 19(2):566.
Atesci, Hasan; Gelling, Wouter; Coneri, Francesco; Hilgenkamp, Hans; van Ruitenbeek, Jan M. 2018. "ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4." Int. J. Mol. Sci. 19, no. 2: 566.
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