Peng, Y.; Liu, L.; Xu, Q.; Luo, Y.; Bai, J.; Xie, X.; Wei, H.; Wei, W.; Xiao, K.; Sun, W.
Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics. Molecules 2025, 30, 1307.
https://doi.org/10.3390/molecules30061307
AMA Style
Peng Y, Liu L, Xu Q, Luo Y, Bai J, Xie X, Wei H, Wei W, Xiao K, Sun W.
Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics. Molecules. 2025; 30(6):1307.
https://doi.org/10.3390/molecules30061307
Chicago/Turabian Style
Peng, Yi, Lingyun Liu, Qingfeng Xu, Yuqiang Luo, Jianzhi Bai, Xifeng Xie, Huanbing Wei, Wenwang Wei, Kai Xiao, and Wenhong Sun.
2025. "Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics" Molecules 30, no. 6: 1307.
https://doi.org/10.3390/molecules30061307
APA Style
Peng, Y., Liu, L., Xu, Q., Luo, Y., Bai, J., Xie, X., Wei, H., Wei, W., Xiao, K., & Sun, W.
(2025). Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics. Molecules, 30(6), 1307.
https://doi.org/10.3390/molecules30061307
