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Article

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3−xN/Cu Integration

1
Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan
2
Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
3
Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editors: M. Jean Daou and Takei Takahiro
Molecules 2019, 24(21), 3882; https://doi.org/10.3390/molecules24213882
Received: 18 September 2019 / Revised: 16 October 2019 / Accepted: 24 October 2019 / Published: 28 October 2019
(This article belongs to the Special Issue Advances in Porous Materials)
In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3−xN film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3−xN/p-SiOCH(N)/Si structure were investigated. The proposed Cu/Mn2O3−xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu/Mn2O3−xN/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects. View Full-Text
Keywords: porous low-dielectric-constant; barrier; MnOx; electrical characteristics; reliability; electric-field acceleration factor; TDDB porous low-dielectric-constant; barrier; MnOx; electrical characteristics; reliability; electric-field acceleration factor; TDDB
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MDPI and ACS Style

Cheng, Y.-L.; Lin, Y.-L.; Lee, C.-Y.; Chen, G.-S.; Fang, J.-S. Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3−xN/Cu Integration. Molecules 2019, 24, 3882. https://doi.org/10.3390/molecules24213882

AMA Style

Cheng Y-L, Lin Y-L, Lee C-Y, Chen G-S, Fang J-S. Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3−xN/Cu Integration. Molecules. 2019; 24(21):3882. https://doi.org/10.3390/molecules24213882

Chicago/Turabian Style

Cheng, Yi-Lung, Yu-Lu Lin, Chih-Yen Lee, Giin-Shan Chen, and Jau-Shiung Fang. 2019. "Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3−xN/Cu Integration" Molecules 24, no. 21: 3882. https://doi.org/10.3390/molecules24213882

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