Search Results (36)

The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al₂O₃) dielectric layer with a thickness of 4 nm. The Al₂O₃ film grown on highly conductive silicon substrates demonstrated a maximum breakdown field of 5.98 MV/cm and a leakage current density as low as 2.48 × 10⁻⁷ A/cm² at 1 MV/cm. MoS₂ FETs incorporating this Al₂O₃ gate dielectric exhibited high-performance n-type characteristics at a low operating voltage of 1 V, achieving a subthreshold swing (SS) of 65 mV/dec, a threshold voltage (V_th) of −0.96 V, a high carrier mobility (μ) of 34.85 cm²·V⁻¹·s⁻¹, and an on/off current ratio exceeding 10⁶. These results highlight the potential of Al₂O₃ in enabling low-power 2D electronic devices for post-Moore applications. Full article

Epitaxial layers of water-soluble Sr₃Al₂O₆ were fabricated as sacrificial layers on SrTiO₃ (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr₃Al₂O₆ as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies. Full article

Ultra-thin ZnO thin-film transistors with a channel thickness of <10 nm have disadvantages of a high threshold voltage and a low carrier mobility due to a low carrier concentration. Although these issues can be addressed by utilizing the strong reducing power of tri-methyl-aluminum, a method is required to control parameters such as the threshold voltage. Therefore, we fabricated a ZnO/Al₂O₃ thin-film transistor with a thickness of 6 nm and adjusted the threshold voltage and carrier mobility through the modulation of carrier generation by varying the growth temperature of Al₂O₃. As the growth temperature of Al₂O₃ increased, oxygen vacancies generated at the hetero–oxide interface increased, supplying a free carrier into the channel and causing the threshold voltage to shift in the negative direction. The optimized device, a ZnO/Al₂O₃ thin-film transistor with a growth temperature of 140 °C, exhibited a μ_sat of 12.26 cm²/V∙s, V_th of 8.16 V, SS of 0.65 V/decade, and I_ON/OFF of 3.98 × 10⁶. X-ray photoelectron spectroscopy was performed to analyze the properties of ZnO/Al₂O₃ thin films. Full article

Aluminum oxide (Al₂O₃) films have been investigated for use in various applications, and numerous deposition techniques have been reported. The spray synthesis method has the advantage of forming a thin layer of crystal at low temperatures using the appropriate precursors. A precursor prepared by diluting Methylaluminoxane with N-methyl pyrrolidone was sprayed onto a porous membrane while varying conditions such as the substrate temperature, feeding speed, and spray amount. The solution penetrated the film during spray application, and the ultra-thin layers deposited on the side wall of the internal pores were observed using a cross-sectional transmission electron microscope (XTEM). The lattice image obtained using the TEM and the composition analysis conducted using a scanning TEM and an energy-dispersive X-ray spectroscope suggest that this thin layer is a layer of Al₂O₃. The formation of Al₂O₃ occurred at lower temperatures than in previous reports. This is a major advantage for applications with low-melting-point materials. The most suitable spraying conditions were determined based on the state of deposition on the surface and inside the membrane. These conditions were applied to a three-layer separator for lithium-ion batteries and their effect on thermal stability was investigated. Through heating experiments and XRD analysis, it was confirmed that the shrinkage and melting of the separator are suppressed by spraying. This process can be expected to have wide applications in low-melting-point materials such as polyolefin. Full article

Ultrathin flexible encapsulation (UFE) using multilayered films has prospects for practical applications, such as implantable and wearable electronics. However, existing investigations of the effect of mechanical bending strains on electrical properties after the encapsulation procedure provide insufficient information for improving the electrical stability of ultrathin silicon nanomembrane (Si NM)-based metal oxide semiconductor capacitors (MOSCAPs). Here, we used atomic layer deposition and molecular layer deposition to generate 3.5 dyads of alternating 11 nm Al₂O₃ and 3.5 nm aluminum alkoxide (alucone) nanolaminates on flexible Si NM-based MOSCAPs. Moreover, we bent the MOSCAPs inwardly to radii of 85 and 110.5 mm and outwardly to radii of 77.5 and 38.5 mm. Subsequently, we tested the unbent and bent MOSCAPs to determine the effect of strain on various electrical parameters, namely the maximum capacitance, minimum capacitance, gate leakage current density, hysteresis voltage, effective oxide charge, oxide trapped charge, interface trap density, and frequency dispersion. The comparison of encapsulated and unencapsulated MOSCAPs on these critical parameters at bending strains indicated that Al₂O₃/alucone nanolaminates stabilized the electrical and interfacial characteristics of the Si NM-based MOSCAPs. These results highlight that ultrathin Al₂O₃/alucone nanolaminates are promising encapsulation materials for prolonging the operational lifetimes of flexible Si NM-based metal oxide semiconductor field-effect transistors. Full article

Flexible Si-based Hf_0.5Zr_0.5O₂ (HZO) ferroelectric devices exhibit numerous advantages in the internet of things (IoT) and edge computing due to their low-power operation, superior scalability, excellent CMOS compatibility, and light weight. However, limited by the brittleness of Si, defects are easily induced in ferroelectric thin films, leading to ferroelectricity degradation and a decrease in bending limit. Thus, a solution involving the addition of an ultra-thin Al buffer layer on the back of the device is proposed to enhance the bending limit and preserve ferroelectric performance. The device equipped with an Al buffer layer exhibits a 2Pr value of 29.5 μC/cm² (25.1 μC/cm²) at an outward (inward) bending radius of 5 mm, and it experiences a decrease to 22.1 μC/cm² (16.8 μC/cm²), even after 6000 bending cycles at a 12 mm outward (inward) radius. This outstanding performance can be attributed to the additional stress generated by the dense Al buffer layer, which is transmitted to the Si substrate and reduces the bending stress on the Si substrate. Notably, the diminished bending stress leads to a reduced crack growth in ferroelectric devices. This work will be beneficial for the development of flexible Si-based ferroelectric devices with high durability, fatigue resistance, and functional mobility. Full article

This work presents a new ultra-high vacuum cluster tool to perform systematic studies of the early growth stages of atomic layer deposited (ALD) ultrathin films following a surface science approach. By combining operando (spectroscopic ellipsometry and quadrupole mass spectrometry) and in situ (X-ray photoelectron spectroscopy) characterization techniques, the cluster allows us to follow the evolution of substrate, film, and reaction intermediates as a function of the total number of ALD cycles, as well as perform a constant diagnosis and evaluation of the ALD process, detecting possible malfunctions that could affect the growth, reproducibility, and conclusions derived from data analysis. The homemade ALD reactor allows the use of multiple precursors and oxidants and its operation under pump and flow-type modes. To illustrate our experimental approach, we revisit the well-known thermal ALD growth of Al₂O₃ using trimethylaluminum and water. We deeply discuss the role of the metallic Ti thin film substrate at room temperature and 200 °C, highlighting the differences between the heterodeposition (<10 cycles) and the homodeposition (>10 cycles) growth regimes at both conditions. This surface science approach will benefit our understanding of the ALD process, paving the way toward more efficient and controllable manufacturing processes. Full article

Flexible capacity applications demand a large energy storage density and high breakdown electric field strength of flexible films. Here, P(VDF-HFP) with ultra-thin Al₂O₃ nanosheet composite films were designed and fabricated through an electrospinning process followed by hot-pressing into a sandwich structure. The results show that the insulating ultra-thin Al₂O₃ nanosheets and the sandwich structure can enhance the composites’ breakdown strength (by 24.8%) and energy density (by 30.6%) compared to the P(VDF-HFP) polymer matrix. An energy storage density of 23.5 J/cm³ at the ultrahigh breakdown strength of 740 kV/mm can be therefore realized. The insulating test and phase-field simulation results reveal that ultra-thin nanosheets insulating buffer layers can reduce the leakage current in composites; thus, it affects the electric field spatial distribution to enhance breakdown strength. Our research provides a feasible method to increase the breakdown strength of ferroelectric polymers, which is comparable to those of non-ferroelectric polymers. Full article

In comparison to conventional nano-infiltration approaches, the atomic layer deposition (ALD) technology exhibits greater potential in the fabrication of inverse opals (IOs) for photocatalysts. In this study, TiO₂ IO and ultra-thin films of Al₂O₃ on IO were successfully deposited using thermal or plasma-assisted ALD and vertical layer deposition from a polystyrene (PS) opal template. SEM/EDX, XRD, Raman, TG/DTG/DTA-MS, PL spectroscopy, and UV Vis spectroscopy were used for the characterization of the nanocomposites. The results showed that the highly ordered opal crystal microstructure had a face-centered cubic (FCC) orientation. The proposed annealing temperature efficiently removed the template, leaving the anatase phase IO, which provided a small contraction in the spheres. In comparison to TiO₂/Al₂O₃ plasma ALD, TiO₂/Al₂O₃ thermal ALD has a better interfacial charge interaction of photoexcited electron–hole pairs in the valence band hole to restrain recombination, resulting in a broad spectrum with a peak in the green region. This was demonstrated by PL. Strong absorption bands were also found in the UV regions, including increased absorption due to slow photons and a narrow optical band gap in the visible region. The results from the photocatalytic activity of the samples show decolorization rates of 35.4%, 24.7%, and 14.8%, for TiO₂, TiO₂/Al₂O₃ thermal, and TiO₂/Al₂O₃ plasma IO ALD samples, respectively. Our results showed that ultra-thin amorphous ALD-grown Al₂O₃ layers have considerable photocatalytic activity. The Al₂O₃ thin film grown by thermal ALD has a more ordered structure compared to the one prepared by plasma ALD, which explains its higher photocatalytic activity. The declined photocatalytic activity of the combined layers was observed due to the reduced electron tunneling effect resulting from the thinness of Al₂O₃. Full article

A photoelectrode for hydrogen evolution reaction (HER) is proposed, which is based on p-type silicon (p-Si) passivated with an ultrathin (10 nm) alumina (Al₂O₃) layer and modified with microformations of a nickel catalyst. The Al₂O₃ layer was formed using atomic layer deposition (ALD), while the nickel was deposited photoelectrochemically. The alumina film improved the electronic properties of the substrate and, at the same time, protected the surface from corrosion and enabled the deposition of nickel microformations. The Ni catalyst increased the HER rate up to one order of magnitude, which was comparable with the rate measured on a hydrogen-terminated electrode. Properties of the alumina film on silicon were comprehensively studied. Grazing incidence X-ray diffraction (GI-XRD) identified the amorphous structure of the ALD oxide layer. Optical profilometry and spectroscopic ellipsometry (SE) showed stability of the film in an acid electrolyte. Resistivity measurements showed that annealing of the film increases its electric resistance by four times. Full article

This communication shows the recipe for plasma-enhanced atomic layer deposition (PEALD) Al₂O₃ ultra-thin films with thicknesses below 40 nm. Al₂O₃ ultra-thin films were deposited by PEALD to improve the rubidium optically pumped atomic magnetometers’ (OPMs) cell lifetime. This requirement is due to the consumption of the alkali metal (rubidium) inside the vapor cells. Moreover, as a silicon wafer was used, an on-chip photodiode was already integrated into the fabrication of the OPM. The ALD parameters were achieved with a GPC close to 1.2 Å/cycle and the ALD window threshold at 250 °C. The PEALD Al₂O₃ ultra-thin films showed a refractive index of 1.55 at 795 nm (tuned to the D1 transition of rubidium for spin-polarization of the atoms). The EDS chemical elemental analysis showed an atomic percentage of 58.65% for oxygen (O) and 41.35% for aluminum (Al), with a mass percentage of 45.69% for O and 54.31% for Al. A sensitive XPS surface elemental composition confirmed the formation of the PEALD Al₂O₃ ultra-thin film with an Al 2s peak at 119.2 eV, Al 2p peak at 74.4 eV, and was oxygen rich. The SEM analysis presented a non-uniformity of around 3%. Finally, the rubidium consumption in the coated OPM was monitored. Therefore, PEALD Al₂O₃ ultra-thin films were deposited while controlling their optical refractive index, crystalline properties, void fraction, surface roughness and thickness uniformity (on OPM volume 1 mm × 1 mm × 0.180 mm cavity etched by RIE), as well as the chemical composition for improving the rubidium OPM lifetime. Full article

We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al₂O₃) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-semiconductor (MIS) capacitors with gate electrode areas of 3.6 × 10⁻⁵ cm² and 6.4 × 10⁻⁵ cm² at room temperature. The modeling results showed the presence of ohmic conduction, Poole Frenkel emission, Schottky emission, and trap-assisted tunneling mechanisms through the Al₂O₃ layer. Based on extracted results, we measured a dielectric conductivity of 5 × 10⁻¹⁵ S/cm at low electric fields, a barrier height at oxide/semiconductor interface of 2 eV, and an energy trap level into bandgap with respect to the conduction band of 3.11 eV. These results could be affected by defect density related to oxygen vacancies, dangling bonds, fixed charges, or interface traps, which generate conduction mechanisms through and over the dielectric energy barrier. In addition, a current density model is developed by considering the sum of dominant conduction mechanisms and results based on the finite element method for electronic devices, achieving a good match with experimental data. Full article

In this paper, we use numerical simulations to investigate ultrathin Cu (In_1−xGa_x) Se₂ solar cells. In the first part, we focus on the cell configuration in which the PV parameters fit and match the fabricated cell characteristics. Our goal is to investigate the impact of different loss mechanisms, such as interface trap density (D_it) and absorber trap density (N_t), in different cell pitch sizes on cell performances. D_it defines the number of carrier traps at CIGS/Al₂O₃ interfaces to recombine with photogenerated carriers. N_t defines the number of carrier traps in the absorber layer. Recombination through traps has been found to be the primary loss process in the investigated cell. Additional numerical simulations reveal appreciable gains in cell performance for various cell pitch sizes, absorber doping densities, Ga content, and graded bandgap under AM1.5 illumination. Research during the recent decade has clarified that the most promising strategy to achieve maximum efficiency consists of the so-called tandem configuration. Therefore, we here propose a u-CIGS/PERT silicon device employing, as a top cell, a u-CIGS cell optimized to take into account the above procedure. The results of these simulations provide insights into the optimization of ultrathin-film CIGS solar cells. Full article

Metal oxide gas sensors are of great interest for applications ranging from lambda sensors to early hazard detection in explosive media and leakage detection due to their superior properties with regard to sensitivity and lifetime, as well as their low cost and portability. However, the influence of ambient gases on the gas response, energy consumption and selectivity still needs to be improved and they are thus the subject of intensive research. In this work, a simple approach is presented to modify and increase the selectivity of gas sensing structures with an ultrathin polymer thin film. The different gas sensing surfaces, CuO, Al₂O₃/CuO and TiO₂ are coated with a conformal < 30 nm Poly(1,3,5,7-tetramethyl-tetravinyl cyclotetrasiloxane) (PV4D4) thin film via solvent-free initiated chemical vapor deposition (iCVD). The obtained structures demonstrate a change in selectivity from ethanol vapor to 2-propanol vapor and an increase in selectivity compared to other vapors of volatile organic compounds. In the case of TiO₂ structures coated with a PV4D4 thin film, the increase in selectivity to 2-propanol vapors is observed even at relatively low operating temperatures, starting from >200 °C. The present study demonstrates possibilities for improving the properties of metal oxide gas sensors, which is very important in applications in fields such as medicine, security and food safety. Full article

The temperature behavior of saturation magnetization and the temperature behavior of the integral signal intensity in electron magnetic resonance spectra is experimentally studied comprehensively using a low-dimensional Al₂O₃/Ge/Al₂O₃/Co (aluminum oxide–cobalt–aluminum oxide–germanium) tunnel junction with different deposition velocities of a ferromagnetic metal (Co) thin layer and non-magnetic layers (Al₂O₃/Ge/Al₂O₃). The cobalt ferromagnetic layer was deposited on aluminum oxide in two ways: in one cycle of creating the structure and with atmospheric injection before deposition of the cobalt layer. The thermomagnetic curves revealed the appearance of minima observed at low temperatures on both sides of the cobalt layer. Possible sources of precession perturbations at low temperatures can be explained by: the influence of the Al₂O₃ layer structure on the Al₂O₃/Co interface; residual gases in the working chamber atmosphere and finely dispersed cobalt pellets distributed over the cobalt film thickness. The work offers information of great significance in terms of practical application, for both fundamental physics and potential applications of ultrathin films. Full article