Search Results (6)

Materials consisting of quantum dots with a semiconductor-core, metal–shell structure often have exciting and tunable photo-electrical properties in a large range of values, and they are adjustable by core and shell structure parameters. Here, we investigated the influence of Mn-shell addition to Ge quantum dots formed in an alumina matrix by magnetron sputtering deposition. We show a well-achieved formation of the 3D regular lattices of Ge-core, Mn-rich shell quantum dots, which were achieved by self-assembled growth mode. Intermixing of Ge and Mn in the shell was observed. The optical, electrical, and photo-conversion properties were strongly affected by the addition of the Mn shell and its thickness. The shell induced changes in the optical gap of the materials and caused an increase in the material’s conductivity. The most significant changes occurred in the photo-electrical properties of the materials. Their quantum efficiency, i.e., the efficiency of the conversion of photon energy to the electrical current, was very strongly enhanced by the shell addition, though it depended on its thickness. The best results were obtained for the thinnest shell added to the Ge core, for which the maximal quantum efficiency was significantly enhanced by more than 100%. The effect was, evidently, the consequence of multiple exciton generation, which was enhanced by the shell addition. The obtained materials offer great potential for various applications in photo-sensitive devices. Full article

Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO₂-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO₂ capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO₂ layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO₂ layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO₂ and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality. Full article

Quantum dot (QD)-based RGB micro light-emitting diode (μ-LED) technology shows immense potential for achieving full-color displays. In this study, we propose a novel structural design that combines blue and quantum well (QW)-intermixing ultraviolet (UV)-hybrid μ-LEDs to achieve high color-conversion efficiency (CCE). For the first time, the impact of various combinations of QD and TiO₂ concentrations, as well as thickness variations on photoluminescence efficiency (PLQY), has been systematically examined through simulation. High-efficiency color-conversion layer (CCL) have been successfully fabricated as a result of these simulations, leading to significant savings in time and material costs. By incorporating scattering particles of TiO₂ in the CCL, we successfully scatter light and disperse QDs, effectively reducing self-aggregation and greatly improving illumination uniformity. Additionally, this design significantly enhances light absorption within the QD films. To enhance device reliability, we introduce a passivation protection layer using low-temperature atomic layer deposition (ALD) technology on the CCL surface. Moreover, we achieve impressive CCE values of 96.25% and 92.91% for the red and green CCLs, respectively, by integrating a modified distributed Bragg reflector (DBR) to suppress light leakage. Our hybrid structure design, in combination with an optical simulation system, not only facilitates rapid acquisition of optimal parameters for highly uniform and efficient color conversion in μ-LED displays but also expands the color gamut to achieve 128.2% in the National Television Standards Committee (NTSC) space and 95.8% in the Rec. 2020 standard. In essence, this research outlines a promising avenue towards the development of bespoke, high-performance μ-LED displays. Full article

A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz. Full article

A 1.55 μm AlGaInAs multi-quantum-well (MQW) ridge waveguide polarization mode controller (PMC) is proposed. The design is based on an asymmetric half-ridge waveguide structure in which the ridge is shallow etched on one side and has a deeply etched mesa structure on the other side. The Finite-Element Method (FEM) was used to simulate the PMC and optimize its structural parameters comprehensively. Furthermore, the fabrication tolerances were also investigated in detail. The optimized PMC has a polarization conversion efficiency (PCE) of around 92.5% with a half-beat length of 1250 μm. When the PMC length was fixed at 1250 μm, to achieve a PCE derivation less than 8%, the tolerances for the ridge waveguide width and shallow etch height were 1.60 μm to 1.65 μm and 2.13 μm to 2.18 μm, respectively. In order to reduce interband gap absorption loss, the quantum well intermixing (QWI) technique was used in the model to realize a blueshift (200 nm) in the PMC. QWI is a simple, flexible, and low-cost technique for fabricating a PMC integrated with a laser diode and reduces parasitic reflections, which would otherwise degrade the overall performance. QWI also eliminates MQW material anisotropy and alleviates the birefringence effect without the need for regrowth, achieving nearly uniform properties as a bulk material. Full article

Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems are complex while imaging methods may suffice for binary or simple ternary compounds where atomic intermixing is restricted to one type of sub-lattice. The emphasis on methodology should assist microscopists in evaluating and quantifying signals from electron micrographs and related spectroscopic data. Examples presented include CdS/ZnS core/shell particles and SiGe, InGaAs and InGaN quantum wells. Full article