Search Results (4)

Advanced lithography requires highly sensitive photoresists to improve the lithographic efficiency, and it is critical, yet challenging, to develop high-sensitivity photoresists and imaging strategies. Here, we report a novel strategy for ultra-high sensitivity using hexafluoroisopropanol (HFIP)-containing fluoropolymer photoresists. The incorporation of HFIP, with its strong electrophilic property and the electron-withdrawing effect of the fluorine atoms, significantly increases the acidity of the photoresist after exposure, enabling imaging without conventional photoacid generators (PAGs). The HFIP-containing photoresist has been evaluated by electron beam lithography to achieve a trench of ~40 nm at an extremely low dose of 3 μC/cm², which shows a sensitivity enhancement of ~10 times compared to the commercial system involving PAGs, revealing its high sensitivity and high-resolution features. Our results demonstrate a new type of PAGs and a novel approach to higher-performance imaging beyond conventional photoresist performance tuning. Full article

Predicting photolithography performance in silico for a given materials combination is essential for developing better patterning processes. However, it is still an extremely daunting task because of the entangled chemistry with multiple reactions among many material components. Herein, we investigated the EUV-induced photochemical reaction mechanism of a model photoacid generator (PAG), triphenylsulfonium cation, using atomiC–Scale materials modeling to elucidate that the acid generation yield strongly depends on two main factors: the lowest unoccupied molecular orbital (LUMO) of PAG cation associated with the electron-trap efficiency ‘before C–S bond dissociation’ and the overall oxidation energy change of rearranged PAG associated with the proton-generation efficiency ‘after C–S bond dissociation’. Furthermore, by considering stepwise reactions accordingly, we developed a two-parameter-based prediction model predicting the exposure dose of the resist, which outperformed the traditional LUMO-based prediction model. Our model suggests that one should not focus only on the LUMO energies but also on the energy change during the rearrangement process of the activated triphenylsulfonium (TPS) species. We also believe that the model is well suited for computational materials screening and/or inverse design of novel PAG materials with high lithographic performances. Full article

In this paper, a chemically amplified (CA) i-line photoresist system is described including a phenolic resin modified with glycidyl methacrylate (GMA) addition and protected with di-tert-butyl dicarbonate (BOC group), here called JB resin. JB resin with different degrees of BOC protection was synthesized and characterized with ultraviolet spectrophotometry, Fourier transform infrared spectroscopy and gel permeation chromatography. These resins were also evaluated in CA resists by formulating the JB resin with a photoacid generator (PAG) and tested at 405 nm and 365 nm exposure wavelengths. The BOC protection ratio at approximately 25 mol% of the Novolak phenol group showed the best performance. The resist showed high sensitivity (approximately 190 mJ/cm²), high resolution and good alkali developer resistance with reliable repeatability, indicating the great practical potential of this JB resist system. Full article

Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce advanced nanoelectronics. The further development of EUVL is heavily based on implementing the so-called high numerical aperture (NA) EUVL, which will enable even smaller pitches up to 8 nm half pitch (HP). In anticipation of this high NA technology, it is crucial to assess the readiness of the current resist materials for the high NA regime to comply with the demanding requirements of resolution, line-edge roughness, and sensitivity (RLS). The achievable tighter pitches require lower film thicknesses for both resist and underlying transfer layers. A concern that is tied to the thinning down is the potential change in resist properties and behavior due to the interaction with the underlayer. To increase the fundamental understanding of ultra-thin films for high NA EUVL, a method to investigate the interplay of reduced film thickness and different patterning-relevant underlayers is developed by looking at the glass transition temperature (T_g) of polymer-based resists. To minimize the ambiguity of the results due to resist additives (i.e., photoacid generator (PAG) and quencher), it was opted to move forward with polymer-only samples, the main component of the resist, at this stage of the investigation. By using dielectric response spectroscopy, the results obtained show that changing the protection group of the polymer, as well as altering the polymer film thickness impacts the dynamics of the polymer mobility, which can be assessed through the T_g of the system. Unexpectedly, changing the underlayer did not result in a clear change in the polymer mobility at the tested film thicknesses. Full article