Search Results (6)

A double-edge-triggered digital low dropout regulator (DLDO) is proposed with a built-in adaptive voltage-controlled oscillator (VCO) clock (AVC) for a system-on-chip (SoC) application. To achieve a fast transient response, the main comparator generates the comparison result at the rising edge of the AVC, and this result is sampled by the coarse or fine bidirectional shifter register at the falling edge of the AVC. Furthermore, the clock frequency can be boosted from 8 MHz at the steady state to 50 MHz by the AVC when the output current suffers from a sudden change, and it can also be adjusted in real-time according to the output voltage, which avoids the oscillation phenomenon and decreases the power consumption during the recovery process. To further lower the power consumption, the self-clock comparator replaces the conventional static comparator in the transient detector. The post-simulation results show that the proposed DLDO consumes a quiescent current of 95.13 μA in the steady state, and drives a maximum load current of 25 mA at the supply power of 0.6 V with an active area of 0.053-mm² in a 180 nm CMOS process. When the load current jumps from 0.5 mA to 25 mA at the edge of 100 ps, the undershoot voltage and overshoot voltage are only 335 mV with the recovery time of 2.7 μs and 47.6 mV with the recovery time of 2.1 μs at the total on-chip capacitor of 50 pF, respectively, resulting in two competitive figures of merits (FoMs) than the previous works. Full article

Digital low-dropout (DLDO) is widely used for power management in the system-on-chip (SoC) because of its low-voltage operation and process scalability. However, conventional DLDOs suffer from the trade-off between transient response and power consumption of the DLDO and the clock generator. This paper proposes an event-driven self-clocked DLDO regulator. The proposed low quiescent current (I_Q) event-driven adaptive frequency clock generator (EACG) adapts its frequency in different load conditions without a current sensor or complex compensation circuit for stable operation in the entire load range. The proposed DLDO does not need any external clocking signal and can maintain low output ripple and low power consumption in the steady-state. The clock-less transient detector (CLTD), consisting of two clock-independent transient detection paths, uses power more efficiently and improves the transient response significantly without sacrificing the power consumption. This work was fabricated in a 40 nm CMOS process with an 0.3 nF on-chip capacitor. The measurement results show that with the step load current between 1 mA and 60 mA, the proposed DLDO achieves a transient recovery time of 220 ns. The total I_Q of the proposed DLDO is only 26 μA in steady-state, and it achieves stable operation in the entire load range. Full article

Digital low drop-out regulator (D-LDO) with fast settling time and superior transient response is gaining increasing attention to make up for the deficiency of analog LDO. However, as the traditional digital LDOs regulate the output voltage code at a rate of 1 bit per clock cycle, the transient response speed is limited. In this paper, a multi-bit conversion technique is proposed to improve the transient response speed. The multi-bit conversion technique is achieved by an error detector with adaptive regulation of proportion and integration parameters in the digital controller before pass devices. Besides, a voltage sensor and a time-to-digital converter are employed to convert the output voltage to digital codes. Implemented in a 180-nm CMOS process, the proposed D-LDO features under 36/33 mV of undershoot/overshoot at $V_{\mathrm{OUT}}$ = 0.95 V as the load current steps up with 40 mA/1 ns on a 0.5 nF load capacitor. The simulated response time is 0.18-ns, the figure-of-merit of speed FOM1 is 0.65 ps and FOM2 achieves 0.068 pF. Full article

Towards the integration of Digital-LDO regulators in the ultra-low-power System-On-Chip Internet-of-Things architecture, the D-LDO architecture should constitute the main regulator for powering digital and mixed-signal loads including the SoC system clock. Such an implementation requires an in-regulator clock generation unit that provides an autonomous D-LDO design. In contrast to contemporary D-LDO designs that employ ring-oscillator architecture which start-up time is dependent on the oscillating frequency, this work presents a design with nano-power consumption, fabricated with an active area of 0.035 $\mathrm{m}{\mathrm{m}}^2$ at a 55-nm Global Foundries CMOS process that introduces a fast start-up burst oscillator based on a high-gain stage with wake-up time independent of D-LDO frequency. In combination with linear search coarse regulation and asynchronous fine regulation, it succeeds 558 nA minimum quiescent current with $C_L$ 75 pF, maximum current efficiency of 99.2% and 1.16x power efficiency improvement compared to analog counterpart oriented to SoC-IoT loads. Full article

The digital low drop-out regulator (LDO) has been used widely in digital circuits for its low supply voltage characteristics. However, as the traditional digital LDOs regulate the output voltage code at a rate of 1 bit per clock cycle, the transient response speed is limited. This paper presents a digital LDO to improve transient response speed with a multi-bit conversion technique. The proposed technology uses a voltage sensor and a time-to-digital converter to convert the output voltage to digital codes. Based on a 65-nm CMOS process, the proposed DLDO reduces the settling time from 147.8 ns to 25.2 ns on average and the response speed is improved by about six times. Full article

To get a better tradeoff between the transient performance and current efficiency of Digital Low-Dropout (DLDO) regulator, this paper proposes an all-digital Low-Dropout (LDO) regulator with adaptive clock technique. The sample clock is supplied by a proposed digital oscillator (DOSC) whose output frequency can be changed seamlessly. The frequency of sample clock and loop gain boost adaptively when the output voltage undershoot/overshoot is detected. Proposed DLDO integrates a ripple controller to eliminate steady-state supply ripple and reduce steady-state power. The proposed DLDO is simulated at Semiconductor Manufacturing International Corporation (SMIC) 55 nm with 5.03e-4 mm2 active area. The simulation results show that the operating voltage of proposed DLDO can be down to 0.5 V and the peak current efficiency is 99.99%. The measured voltage undershoot is 40 mV and transient response time is 500 ns with load step of 10 to 800 uA. Full article