Search Results (34)

Modern multi-junction solar cell technology offers a pathway to achieving consistent and high photovoltaic conversion efficiencies through enhanced solar spectrum absorption. Indeed, during the last years, the industries of solar cells have focused on optimizing device structures, utilizing both robust and delicate materials to maximize their performances. This paper presents the modeling and optimization of the electrical and structural properties of high-efficiency InGaP/GaAs double-junction solar cells, specifically without employing an anti-reflective coating. This developed structure has been achieved by introducing a buffer layer in the lower layer and incorporating an upper back surface field layer into the investigated cell structure. Furthermore, the optimization conducted in this paper using Silvaco-Atlas software (version 2018) under the AM1.5G spectrum reveals that the proposed InGaP/GaAs tandem cell configuration exhibits significant performance, reaching conversion efficiency of 41.585%. It can be said that this adapted structure yields a short-circuit current density of 21.65 mA/cm², an open-circuit voltage of 2.319 V, and a filling factor of 84.001%. Whereas this newly optimized structure demonstrates its effectiveness in enhancing solar cell efficiency performance, presenting highly promising results with potential significance for the devices’ optical and electrical properties. Full article

Renewable energy is in high demand, with significant contributions from the solar industry encouraging research into more efficient, cost-effective, and versatile solar cell technologies. Anti-reflection coating (ARC) is an important method for improving solar cell efficiency by minimizing light reflectance and maximizing photon absorption. This study investigates the electrical and optical behaviors of single- and double-layer ARCs for gallium arsenide (GaAs) solar cells, using PC1D simulation for single-layer SiO₂, and ZnSe, and double-layer SiO₂/ZnSe configurations. The findings indicate that the double-layer SiO₂/ZnSe ARC structure significantly reduces reflectance and enhances light absorption, leading to a higher current density (J_sc) and overall efficiency. With optimized layer thicknesses of 60 nm (ZnSe) and 100 nm (SiO₂), the efficiency increased from 20.628% to 30.904%, representing a 49.81% improvement. This enhancement is primarily attributed to the increased photon absorption and a higher electron–hole generation rate, confirming the superior performance of double-layer ARCs over single-layer configurations. Full article

This study presents a systematic optimization of wide-angle metamaterial long-pass (LP) edge filters based on silicon nanospheres (SiNP). Multi-layered configurations incorporating SiNP-meta-films and anti-reflection coating (ARC) elements not previously considered in the literature are explored to enhance their filter performance in both stop and pass bands. This research has successfully developed an accurate model for the effective refractive index using Kramers–Kronig relations, enabling the use of classical thin-film design software for rapid device performance optimization, which is verified by full-wave numerical software. This systematic optimization has produced highly efficient, near-shift-free long-pass metamaterial filters, evidenced by their high optical density (OD = 2.55) and low spectral shift across a wide angular range (0°–60°). These advancements herald the development of high-efficiency metamaterial optical components suitable for a variety of applications that require a consistent performance across diverse angles of incidence. Full article

A porous anti-reflective coating (P-ARC) with average transmittance in the visible range of 97.9% was fabricated through the sol-gel method, followed by calcination at a relatively low temperature (220 °C) using the porogen of Laureth-5 carboxylic acid via a one-step approach. The results demonstrated the coating had an absolute value that was 7.5% higher than that of bare glass (92%). The prepared porous anti-reflective coating had a refractive index as low as 1.21. The coating remained undamaged during 3M tape stripping tests while maintaining excellent light transmittance. This work presents a film that has good thermal stability, chemical stability, and mechanical stability. Full article

Solar cells play an increasing role in global electricity production, and it is critical to maximize their conversion efficiency to ensure the highest possible production. The number of photons entering the absorbing layer of the solar cell plays an important role in achieving a high conversion efficiency. Metal nanoparticles supporting localized surface plasmon resonances (LSPRs) have for years been suggested for increasing light in-coupling for solar cell applications. However, most studies have focused on materials exhibiting strong LSPRs, which often come with the drawback of considerable light absorption within the solar spectrum, limiting their applications and widespread use. Recently, aluminum (Al) nanoparticles have gained increasing interest due to their tuneable LSPRs in the ultraviolet and visible regions of the spectrum. In this study, we present an ideal configuration for maximizing light in-coupling into a standard textured crystalline silicon (c-Si) solar cell by determining the optimal Al nanoparticle and anti-reflection coating (ARC) parameters. The best-case parameters increase the number of photons absorbed by up to 3.3%. We give a complete description of the dominating light–matter interaction mechanisms leading to the enhancement and reveal that the increase is due to the nanoparticles optically exhibiting both particle- and thin-film characteristics, which has not been demonstrated in earlier works. Full article

Recently, the development of tandem devices has become one of the main strategies for further improving the efficiency of photovoltaic modules. In this regard, combining well-established Si technology with thin film technology is one of the most promising approaches. However, this imposes several limitations on such thin film technology, such as low prices, the absence of scarce or toxic elements, the possibility to tune optical properties and long lifetime stability. Therefore, to show the potential of kesterite/silicon tandems, in this work, a 2 terminal (2T) structure using pure germanium kesterite was simulated with combined SCAPS and transfer matrix methods. To explore the impact of individual modifications, a stepwise approach was adopted to improve the kesterite. For the bottom sub cell, a state-of-the-art silicon PERC cell was used with an efficiency of 24%. As a final result, 19.56% efficiency was obtained for the standalone top kesterite solar cell and 28.6% for the tandem device, exceeding standalone silicon efficiency by 4.6% and justifying a new method for improvement. The improvement observed could be attributed primarily to the enhanced effective lifetime, optimized base doping, and mitigated recombination at both the back and top layers of the CZGSSe absorber. Finally, colorimetric analysis showed that color purity for such tandem structure was low, and hues were limited to the predominant colors, which were reddish, yellowish, and purple in an anti-reflective coating (ARC) thickness range of 20–300 nm. The sensitivity of color variation for the whole ARC thickness range to electrical parameters was minimal: efficiency was obtained ranging from 28.05% to 28.63%. Full article

In this paper, narrow-bandgap polymer acceptors combining a benzotriazole (BTz)-core fused-ring segment, named the PZT series, were used with a high-absorption-efficiency polymer (PBDB) compound with branched 2-butyl octyl, linear n-octyl, and methyl to be utilized as a graded-index (GI) active layer of the polymer solar cells (PSCs) to increase the photocurrent and enhance solar efficiency compared to the existing PBDB-T:PZT and PBDB-T:PZT-γ. In addition, a two-dimensional photonic crystal (2D-PhC) structure was utilized as a light-trapping anti-reflection coating (ARC) thin film based on indium tin oxide (ITO) to reduce incident light reflection and enhance its absorption. The dimensions of the cell layers were optimized to achieve the maximum power-conversion efficiency (PCE). Furthermore, the design and simulations were conducted from a 300 nm to 1200 nm wavelength range using a finite difference time-domain (FDTD) analysis. One of the most important results expected from the study was the design of a nano solar cell at (64 µm)² with a PCE of 25.1%, a short-circuit current density (J_SC) of 27.74 mA/cm², and an open-circuit voltage (V_OC) of 0.986 V. Full article

Antireflection coatings (ARCs) with an indium thin oxide (ITO) layer on silicon heterojunction solar cells (SHJ) have garnered significant attention, which is due to their potential for increasing current density (J_sc) and enhancing reliability. We propose an additional tungsten trioxide (WO₃) layer on the ITO/Si structure in this paper in order to raise the J_sc and demonstrate the influence on the SHJ solar cell. First, we simulate the J_sc characteristics for the proposed WO₃/ITO/Si structure in order to analyze J_sc depending on the thickness of WO₃ using an OPAL 2 simulator. As a result, the OPAL 2 simulation shows an increase in J_sc of 0.65 mA/cm² after the 19 nm WO₃ deposition on ITO with a doping concentration of 6.1 × 10²⁰/cm². We then fabricate the proposed samples and observe an improved efficiency of 0.5% with an increased J_sc of 0.75 mA/cm² when using a 20 nm thick WO₃ layer on the SHJ solar cell. The results indicate that the WO₃ layer can be a candidate to improve the efficiency of SHJ solar cells with a low fabrication cost. Full article

Current mismatch due to solar cell failure or partial shading of solar panels may cause a reverse biasing of solar cells inside a photovoltaic (PV) module. The reverse-biased cells consume power instead of generating it, resulting in hot spots. To protect the solar cell against the reverse current, we introduce a novel design of a self-protected thin-film crystalline silicon (c-Si) solar cell using TCAD simulation. The proposed device achieves two distinct functions where it acts as a regular solar cell at forward bias while it performs as a backward diode upon reverse biasing. The ON-state voltage (V_ON) of the backward equivalent diode is found to be 0.062 V, which is lower than the value for the Schottky diode usually used as a protective element in a string of solar cells. Furthermore, enhancement techniques to improve the electrical and optical characteristics of the self-protected device are investigated. The proposed solar cell is enhanced by optimizing different design parameters, such as the doping concentration and the layers’ thicknesses. The enhanced cell structure shows an improvement in the short-circuit current density (J_SC) and the open-circuit voltage (V_OC), and thus an increased power conversion efficiency (PCE) while the V_ON is increased due to an increase of the J_SC. Moreover, the simulation results depict that, by the introduction of an antireflection coating (ARC) layer, the external quantum efficiency (EQE) is enhanced and the PCE is boosted to 22.43%. Although the inclusion of ARC results in increasing V_ON, it is still lower than the value of V_ON for the Schottky diode encountered in current protection technology. Full article

In this paper, we investigate the effects of aluminum oxide (Al₂O₃) antireflection coating (ARC) on silicon heterojunction (SHJ) solar cells. Comprehensive ARCs simulation with Al₂O₃/ITO/c-Si structure is carried out and the feasibility to improve the short circuit current density (J_SC) is demonstrated. Based on the simulation results, we apply Al₂O₃ ARC on SHJ solar cells, and the increasement in J_SC to 1.5 mA/cm² is observed with an Al₂O₃ layer thickness of 20 nm. It is because the total reflectance of SHJ solar cells is decreased by the shifting of the wavelength range on constructive and destructive light interference. As a result, we believe that the proposed Al₂O₃ ARC can support an effective engineering technic to increase J_SC and efficiency of SHJ solar cells. Full article

Ion bombardment (IB) is a promising nanofabrication tool for self-organized nanostructures. When ions bombard a nominally flat solid surface, self-organized nanoripples can be induced on the irradiated target surface, which are called intrinsic nanoripples of the target material. The degree of ordering of nanoripples is an outstanding issue to be overcome, similar to other self-organization methods. In this study, the IB-induced nanoripples on bilayer systems with enhanced quality are revisited from the perspective of guided self-organization. First, power spectral density (PSD) entropy is introduced to evaluate the degree of ordering of the irradiated nanoripples, which is calculated based on the PSD curve of an atomic force microscopy image (i.e., the Fourier transform of the surface height. The PSD entropy can characterize the degree of ordering of nanoripples). The lower the PSD entropy of the nanoripples is, the higher the degree of ordering of the nanoripples. Second, to deepen the understanding of the enhanced quality of nanoripples on bilayer systems, the temporal evolution of the nanoripples on the photoresist (PR)/antireflection coating (ARC) and Au/ARC bilayer systems are compared with those of single PR and ARC layers. Finally, we demonstrate that a series of intrinsic IB-induced nanoripples on the top layer may act as a kind of self-organized template to guide the development of another series of latent IB-induced nanoripples on the underlying layer, aiming at improving the ripple ordering. The template with a self-organized nanostructure may alleviate the critical requirement for periodic templates with a small period of ~100 nm. The work may also provide inspiration for guided self-organization in other fields. Full article

The antireflection coating (ARC) suppresses surface light loss and thus improves the power conversion efficiency (PCE) of solar cells, which is its essential function. This paper reviews the latest applications of antireflection optical thin films in different types of solar cells and summarizes the experimental data. Basic optical theories of designing antireflection coatings, commonly used antireflection materials, and their classic combinations are introduced. Since single and double antireflection coatings no longer meet the research needs in terms of antireflection effect and bandwidth, the current research mainly concentrates on multiple layer antireflection coatings, for example, adjusting the porosity or material components to achieve a better refractive index matching and the reflection effect. However, blindly stacking the antireflection films is unfeasible, and the stress superposition would allow the film layer to fail quickly. The gradient refractive index (GRIN) structure almost eliminates the interface, which significantly improves the adhesion and permeability efficiency. The high-low-high-low refractive index (HLHL) structure achieves considerable antireflection efficiency with fewer materials while selecting materials with opposite stress properties improves the ease of stress management. However, more sophisticated techniques are needed to prepare these two structures. Furthermore, using fewer materials to achieve a better antireflection effect and reduce the impact of stress on the coatings is a research hotspot worthy of attention. Full article

Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO₂) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO₂ ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO₂ ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO₂ ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum power conversion efficiency (PCE) of 21.15%. The thicknesses of HfO₂ ARC considerably impacted the photovoltaic (PV) characteristics of Si solar cells, leading to achieving high-performance solar cells. Full article

In the current study, the performance of the npn solar cell (SC) microstructure is improved by inspecting some modifications to provide possible paths for fabrication techniques of the structure. The npn microstructure is simulated by applying a process simulator by starting with a heavily doped p-type substrate which could be based on low-cost Si wafers. After etching deep notches through the substrate and forming the emitter by n-type diffusion, an aluminum layer is deposited to form the emitter electrode with about 0.1 µm thickness; thereby, the notches are partially filled. This nearly-open-notches microstructure, using thin metal instead of filling the notch completely with Al, gives an efficiency of 15.3%, which is higher than the conventional structure by 0.8%. Moreover, as antireflection coating (ARC) techniques play a crucial role in decreasing the front surface reflectivity, we apply different ARC schemes to inspect their influence on the optical performance. The influence of utilizing single layer (ZnO), double (Si₃N₄/ZnO), and triple (SiO₂/Si₃N/ZnO) ARC systems is investigated, and the simulation results are compared. The improvement in the structure performance because of the inclusion of ARC is evaluated by the relative change in the efficiency (Δη). In the single, double, and triple ARC, Δη is found to be 12.5%, 15.4%, and 17%, respectively. All simulations are performed by using a full TCAD process and device simulators under AM1.5 illumination. Full article

In this study, we report the fabrication of high quality AZO/NRs-ZnO/n-ZnO/p-GaAs heterojunction via a novel optimized design. First of all, the electrical proprieties of gallium arsenide (GaAs) substrates were enhanced via an optimized gettering treatment that was based on a variable temperature process (VTP) resulting in an obvious increase of the effective minority carrier lifetime (τ_eff) from 8.3 ns to 27.6 ns, measured using time-resolved photoluminescence (TRPL). Afterward, the deposition of a zinc oxide (ZnO) emitter was optimized and examined in view of its use both as a light trapping layer (antireflection) and as the n-type partner for the p-type (GaAs) substrate. Nanorod-shaped ZnO was grown successfully on top of the emitter, as an antireflective coating (ARC), to further boost the absorption of light for a large broadband energy harvesting. The interface state of the prepared heterojunction is a key parameter to improve the prepared heterojunction performance, thus, we used laser ablation to create parallel line microgroove patterns in the GaAs front surface. We studied the effect of each step on the performance of the n-ZnO/GaAs heterojunction. The results demonstrate a significant improvement in V_oc, J_sc, fill factor (FF), and an obvious enhancement in the I–V characteristics, exhibiting good diode properties, giving rise to the photovoltaic conversion efficiency (η) from 8.31% to 19.7%, more than two times higher than the reference. Full article