Search Results (10)

We report the growth and optical characterization of single-crystal BiFe_1−xMn_xO₃ thin films directly on SrTiO₃/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO₃ to 2.58 eV in BiFe_0.74Mn_0.26O₃, consistent with previous reports on Mn-doped BiFeO₃. These findings highlight the potential of BiFe₁₋_xMn_xO₃ films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications. Full article

Bismuth ferrite BiFeO₃ (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions Bi_0.9La_0.1(Fe_1−xMn_x)O₃ (x = 0, 0.05, 0.1, 0.15) (denoted as BLF, BLFM5, BLFM10, BLFM15, respectively) were prepared via a sol–gel technique on indium tin oxide (ITO) glass. All the films are monophasic, showing good crystallinity. The optical bandgap E_g was found to decrease monotonously with an increase in the Mn doping amount. Compared with other compositions, the BLFM5 sample exhibits a better crystallinity and less oxygen vacancies as indicated by XRD and XPS measurements, thereby achieving a better J–V performance. Based on BLFM5 as the light absorbing layer, the ITO/ZnO/BLFM5/Pt and ITO/ZnO/BLFM5/NiO/Pt heterostructure devices were designed and characterized. It was found that the introduction of the ZnO layer increases both the open circuit voltage (V_oc) and the short circuit current density (J_sc) with V_oc = 90.2 mV and J_sc = 6.90 μA/cm² for the Pt/ BLFM5/ZnO/ITO device. However, the insertion of the NiO layer reduces both V_oc and J_sc, which is attributed to the weakened built-in electric field at the NiO/BLFM5 interface. Full article

The effect of ferromagnetic CaMnO₃ (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO₃ is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P–E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching. Full article

Emission ⁵⁷Fe Mössbauer spectroscopy (eMS), following the implantation of radioactive ⁵⁷Mn⁺ ions, has been used to study the temperature dependence of the hyperfine magnetic field at Fe sites in Ba-doped BiFeO₃ (BFO) thin films. ⁵⁷Mn β decays (t_1/2 = 90 s) to the 14.4 keV Mössbauer state of ⁵⁷Fe, thus allowing online eMS measurements at a selection of sample temperatures during Mn implantation. The eMS measurements were performed on two thin film BFO samples, 88 nm and 300 nm thick, and doped to 15% with Ba ions. The samples were prepared by pulsed laser deposition on SrTiO₃ substrates. X-ray diffraction analyses of the samples showed that the films grew in a tetragonal distorted structure. The Mössbauer spectra of the two films, measured at absorber temperatures in the range 301 K–700 K, comprised a central pair of paramagnetic doublets and a magnetic sextet feature in the wings. The magnetic component was resolved into (i) a component attributed to hyperfine interactions at Fe³⁺ ions located in octahedral sites (B_hf); and (ii) to Fe³⁺ ions in implantation induced lattice defects, which were characterized by a distribution of the magnetic field B_Distr. The hyperfine magnetic field at the Fe probes in the octahedral site has a room temperature value of B_hf = 44.5(9) T. At higher sample temperatures, the B_hf becomes much weaker, with the Fe³⁺ hyperfine magnetic contribution disappearing above 700 K. Simultaneous analysis of the Ba–BFO eMS spectra shows that the variation of the hyperfine field with temperature follows the Brillouin curve for S = 5/2. Full article

After the discovery of bulk photovoltaic effect more than half a century ago, ferro-electrical and magneto-optical experiments have provided insights into various related topics, revealing above bandgap open voltages and non-central symmetrical current mechanisms. However, the nature of the photon-generated carriers responses and their microscopic mechanisms remain unclear. Here, all-inorganic perovskite Bi${}_{0.85}$Gd${}_{0.15}$Fe${}_{1-x}$Mn${}_x$O${}_3$ thin films were prepared by a sol-gel process and the effects of Gd and Mn co-doped bismuth ferrites on their microtopography, grain boundries, multiferroic, and optical properties were studied. We discovered a simple “proof of principle” type new method that by one-step measuring the leakage current, one can demonstrate the value of photo generated current being the sum of ballistic current and shift current, which are combined to form the so-called bulk photovoltaic current, and can be related to the prototype intrinsic properties such as magneto-optical coupling and ferroelectric polarization. This result has significant potential influence on design principles for engineering multiferroic optoelectronic devices and future photovoltaic industry development. Full article

Bi_1−xNd_xFe_0.99Mn_0.01O₃ (BNFMO, x = 0.00~0.20) films were epitaxially grown on Nb:SrTiO₃ (001) substrates using pulsed laser deposition. It was found that the Nd-doping concentration has a great impact on the surface morphology, crystal structure, and electrical properties. BNFMO thin film with low Nd-doping concentration (≤16%) crystallizes into a rhombohedral structure, while the high Nd-doping (>16%) will lead to the formation of an orthogonal structure. Furthermore, to eliminate the resistive switching (RS) effect, a positive-up–negative-down (PUND) measurement was applied on two devices in series. The remnant polarization experiences an increase with the Nd-doping concentration increasing to 16%, then drops down with the further increased concentration of Nd. Finally, the ferroelectric photovoltaic effect is also regulated by the ferroelectric polarization, and the maximum photocurrent of 1758 μA/cm² was obtained in Bi_0.84Nd_0.16Fe_0.99Mn_0.01O₃ thin film. BNFMO films show great potential for ferroelectric and photovoltaic applications. Full article

Bi_1−xSm_xFe_0.98Mn_0.02O₃ (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm²). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content. Full article

Superlattice-structured epitaxial thin films composed of Mn(5%)-doped BiFeO₃ and BaTiO₃ with a total thickness of 600 perovskite (ABO₃) unit cells were grown on single-crystal SrTiO₃ substrates by pulsed laser deposition, and their polarization and dielectric properties were investigated. When the layers of Mn-BiFeO₃ and BaTiO₃ have over 25 ABO₃ unit cells (N), the superlattice can be regarded as a simple series connection of their individual capacitors. The superlattices with an N of 5 or less behave as a unified ferroelectric, where the BaTiO₃ and Mn-BiFeO₃ layers are structurally and electronically coupled. Density functional theory calculations can explain the behavior of spontaneous polarization for the superlattices in this thin regime. We propose that a superlattice formation comprising two types of perovskite layers with different crystal symmetries opens a path to novel ferroelectrics that cannot be obtained in a solid solution system. Full article

The improvement of ferromagnetic properties is critical for the practical application of multiferroic materials, to be exact, BiFeO₃ (BFO). Herein, we have investigated the evolution in the structure and morphology of Ho or/and Mn-doped thin films and the related diversification in ferromagnetic behavior. BFO, Bi_0.95Ho_0.05FeO₃ (BHFO), BiFe_0.95Mn_0.05O₃ (BFMO) and Bi_0.95Ho_0.05Fe_0.95Mn_0.05O₃ (BHFMO) thin films are synthesized via the conventional sol-gel method. Density, size and phase structure are crucial to optimize the ferromagnetic properties. Specifically, under the applied magnetic field of 10 kOe, BHFO and BFMO thin films can produce obvious magnetic properties during magnetization and, additionally, doping with Ho and Mn (BHFMO) can achieve better magnetic properties. This enhancement is attributed to the lattice distortions caused by the ionic sizes difference between the doping agent and the host, the generation of the new exchange interactions and the inhibition of the antiferromagnetic spiral modulated spin structure. This study provides key insights of understanding the tunable ferromagnetic properties of co-doped BFO. Full article

Pure BiFeO₃ and heterostructured BiFeO₃/BiFe_0.95Mn_0.05O₃ (5% Mn-doped BiFeO₃) thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO₃ films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm⁻²). By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe_0.95Mn_0.05O₃ layer and an internal field being built in the BiFeO₃/BiFe_0.95Mn_0.05O₃ interface. BiFeO₃/BiFe_0.95Mn_0.05O₃ and BiFe_0.95Mn_0.05O₃ thin films demonstrated poor photo activity compared with pure BiFeO₃ films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe_0.95Mn_0.05O₃ layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation. Full article