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Search Results (4)

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Keywords = AlGaN Schottky detector

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8 pages, 1599 KiB  
Article
A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition
by Yujie Huang, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang and Ping Chen
Nanomaterials 2023, 13(3), 525; https://doi.org/10.3390/nano13030525 - 28 Jan 2023
Cited by 4 | Viewed by 1974
Abstract
The dark leakage current of AlxGa1-xN Schottky barrier detectors with different Al contents is investigated. It was found that the dark leakage of AlxGa1-xN detectors increased with increasing Al content. The XRD and SIMS results [...] Read more.
The dark leakage current of AlxGa1-xN Schottky barrier detectors with different Al contents is investigated. It was found that the dark leakage of AlxGa1-xN detectors increased with increasing Al content. The XRD and SIMS results showed that there was no significant difference of the dislocation density and carbon impurity concentration in five AlxGa1-xN samples with different Al content. This was likely not the main reason for the difference in dark leakage current of AlxGa1-xN detectors. However, the results of positron annihilation showed that the vacancy defect concentration increased with increasing Al content. This was consistent with the result that the dark leakage current increased with increasing Al content. With the increase of vacancy concentration, the vacancy defect energy levels also increased, and the probability of electron tunneling through defect levels increased. In contrast, the Schottky barrier height decreased, which eventually led to the increase of dark leakage current. This discovery should be beneficial to an accurate control of the performance of AlxGa1-xN detectors. Full article
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8 pages, 1634 KiB  
Article
Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
by Yujie Huang, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang and Ping Chen
Nanomaterials 2022, 12(18), 3148; https://doi.org/10.3390/nano12183148 - 11 Sep 2022
Cited by 15 | Viewed by 2124
Abstract
The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of [...] Read more.
The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors. Full article
(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)
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12 pages, 4830 KiB  
Article
Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation
by Tomas Ceponis, Kazimieras Badokas, Laimonas Deveikis, Jevgenij Pavlov, Vytautas Rumbauskas, Vitalij Kovalevskij, Sandra Stanionyte, Gintautas Tamulaitis and Eugenijus Gaubas
Sensors 2019, 19(15), 3388; https://doi.org/10.3390/s19153388 - 1 Aug 2019
Cited by 2 | Viewed by 2877
Abstract
Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in [...] Read more.
Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions. In this work, study of evolution of the proton-induced luminescence spectra and short-circuit current has been simultaneously performed during 1.6 MeV proton irradiation. GaN and AlGaN (with various Al concentrations) epi-layers grown by metalorganic chemical vapour deposition technique and Schottky diode structures have been examined. Variations of spectral and electrical parameters could be applied for the remote dosimetry of large hadron fluences. Full article
(This article belongs to the Section Physical Sensors)
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16 pages, 938 KiB  
Article
Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications
by Abdul Manaf Hashim, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman and Abdul Rahim Abdul Rahman
Sensors 2011, 11(8), 8127-8142; https://doi.org/10.3390/s110808127 - 18 Aug 2011
Cited by 16 | Viewed by 12201
Abstract
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and [...] Read more.
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. Full article
(This article belongs to the Section Chemical Sensors)
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