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Authors = Alessandro S. Spinelli

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21 pages, 1986 KiB  
Article
Dynamic Prediction of Rectal Cancer Relapse and Mortality Using a Landmarking-Based Machine Learning Model: A Multicenter Retrospective Study from the Italian Society of Surgical Oncology—Colorectal Cancer Network Collaborative Group
by Rossella Reddavid, Ugo Elmore, Jacopo Moro, Paola De Nardi, Alberto Biondi, Roberto Persiani, Leonardo Solaini, Donato P. Pafundi, Desiree Cianflocca, Diego Sasia, Marco Milone, Giulia Turri, Michela Mineccia, Francesca Pecchini, Gaetano Gallo, Daniela Rega, Simona Gili, Fabio Maiello, Andrea Barberis, Federico Costanzo, Monica Ortenzi, Andrea Divizia, Caterina Foppa, Gabriele Anania, Antonino Spinelli, Giuseppe S. Sica, Mario Guerrieri, Roberto Polastri, Francesco Bianco, Paolo Delrio, Giuseppe Sammarco, Micaela Piccoli, Alessandro Ferrero, Corrado Pedrazzani, Michele Manigrasso, Felice Borghi, Claudio Coco, Davide Cavaliere, Domenico D’Ugo, Riccardo Rosati and Danila Azzolinaadd Show full author list remove Hide full author list
Cancers 2025, 17(8), 1294; https://doi.org/10.3390/cancers17081294 - 11 Apr 2025
Viewed by 1026
Abstract
Background: Almost 30% of patients with rectal cancer (RC) who submit to comprehensive treatment experience relapse. Surveillance plays a leading role in early detection. The landmark approach provides a more flexible and dynamic framework for survival prediction. Objective: This large retrospective [...] Read more.
Background: Almost 30% of patients with rectal cancer (RC) who submit to comprehensive treatment experience relapse. Surveillance plays a leading role in early detection. The landmark approach provides a more flexible and dynamic framework for survival prediction. Objective: This large retrospective study aims to develop a machine learning algorithm to profile the patient prognosis, especially the risk and the onset of RC relapse after curative resection. Methods: A cohort of 2450 RC patients were analyzed using landmark analysis. Model A applied a classical cause-specific Cox approach with a landmarking approach, while Model B implemented a landmarking-based RSF (random survival forest) competing risk algorithm. The two models were compared in terms of predictive and interpretative ability. A bootstrapped validation strategy was employed to validate the model’s performance and prevent overfitting. The best-performing hyperparameters were selected systematically, ensuring the model’s robustness within the landmark approach. The study assessed these factors’ importance and interactions using RSF and compared the predictive accuracy to that of the classical Cox model. Results: Model B outperformed Model A (mean C-index 0.95 vs. 0.78), capturing complex interactions and providing dynamic, individualized relapse predictions. Clinical factors influencing survival outcomes were identified across time with the landmark approach allowing for more accurate and timely predictions. Conclusions: The landmark approach offers an improvement over traditional methods in survival analysis. By accommodating time-dependent variables and the evolving nature of patient data, this approach provides a precise tool for profiling RC survival, thereby supporting more informed and dynamic clinical decision-making. Full article
(This article belongs to the Special Issue Application of Biostatistics in Cancer Research)
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12 pages, 3116 KiB  
Article
Origin of the Temperature Dependence of Gate-Induced Drain Leakage-Assisted Erase in Three-Dimensional nand Flash Memories
by David G. Refaldi, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli and Christian Monzio Compagnoni
Micromachines 2024, 15(12), 1516; https://doi.org/10.3390/mi15121516 - 20 Dec 2024
Cited by 1 | Viewed by 1263
Abstract
Through detailed experimental and modeling activities, this paper investigates the origin of the temperature dependence of the Erase operation in 3D nand flash arrays. First of all, experimental data collected down to the cryogenic regime on both charge-trap and floating-gate arrays are provided [...] Read more.
Through detailed experimental and modeling activities, this paper investigates the origin of the temperature dependence of the Erase operation in 3D nand flash arrays. First of all, experimental data collected down to the cryogenic regime on both charge-trap and floating-gate arrays are provided to demonstrate that the reduction in temperature makes cells harder to Erase irrespective of the nature of their storage layer. This evidence is then attributed to the weakening, with the decrease in temperature, of the gate-induced drain leakage (GIDL) current exploited to set the electrostatic potential of the body of the nand strings during Erase. Modeling results for the GIDL-assisted Erase operation, finally, allow not only to support this conclusion but also to directly correlate the change with temperature of the electrostatic potential of the string body with the change with temperature of the erased threshold-voltage of the memory cells. Full article
(This article belongs to the Section E:Engineering and Technology)
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14 pages, 2163 KiB  
Review
Random Telegraph Noise in 3D NAND Flash Memories
by Alessandro S. Spinelli, Gerardo Malavena, Andrea L. Lacaita and Christian Monzio Compagnoni
Micromachines 2021, 12(6), 703; https://doi.org/10.3390/mi12060703 - 16 Jun 2021
Cited by 10 | Viewed by 6129
Abstract
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of [...] Read more.
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps. Full article
(This article belongs to the Special Issue Flash Memory Devices)
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10 pages, 6742 KiB  
Article
QUBIC: Exploring the Primordial Universe with the Q&U Bolometric Interferometer
by Aniello Mennella, Peter Ade, Giorgio Amico, Didier Auguste, Jonathan Aumont, Stefano Banfi, Gustavo Barbaràn, Paola Battaglia, Elia Battistelli, Alessandro Baù, Benoit Bélier, David G. Bennett, Laurent Bergé, Jean Philippe Bernard, Marco Bersanelli, Marie Anne Bigot Sazy, Nathan Bleurvacq, Juan Bonaparte, Julien Bonis, Emory Bunn, David Burke, Daniele Buzi, Alessandro Buzzelli, Francesco Cavaliere, Pierre Chanial, Claude Chapron, Romain Charlassier, Fabio Columbro, Gabriele Coppi, Alessandro Coppolecchia, Rocco D’Agostino, Giuseppe D’Alessandro, Paolo De Bernardis, Giancarlo De Gasperis, Michele De Leo, Marco De Petris, Andres Di Donato, Louis Dumoulin, Alberto Etchegoyen, Adrián Fasciszewski, Cristian Franceschet, Martin Miguel Gamboa Lerena, Beatriz Garcia, Xavier Garrido, Michel Gaspard, Amanda Gault, Donnacha Gayer, Massimo Gervasi, Martin Giard, Yannick Giraud Héraud, Mariano Gómez Berisso, Manuel González, Marcin Gradziel, Laurent Grandsire, Eric Guerard, Jean Christophe Hamilton, Diego Harari, Vic Haynes, Sophie Henrot Versillé, Duc Thuong Hoang, Nicolas Holtzer, Federico Incardona, Eric Jules, Jean Kaplan, Andrei Korotkov, Christian Kristukat, Luca Lamagna, Sotiris Loucatos, Thibaut Louis, Amy Lowitz, Vladimir Lukovic, Raùl Horacio Luterstein, Bruno Maffei, Stefanos Marnieros, Silvia Masi, Angelo Mattei, Andrew May, Mark McCulloch, Maria Clementina Medina, Lorenzo Mele, Simon J. Melhuish, Ludovic Montier, Louise Mousset, Luis Mariano Mundo, John Anthony Murphy, James David Murphy, Creidhe O’Sullivan, Emiliano Olivieri, Alessandro Paiella, Francois Pajot, Andrea Passerini, Hernan Pastoriza, Alessandro Pelosi, Camille Perbost, Maurizio Perciballi, Federico Pezzotta, Francesco Piacentini, Michel Piat, Lucio Piccirillo, Giampaolo Pisano, Gianluca Polenta, Damien Prêle, Roberto Puddu, Damien Rambaud, Pablo Ringegni, Gustavo E. Romero, Maria Salatino, Alessandro Schillaci, Claudia G. Scóccola, Stephen P. Scully, Sebastiano Spinelli, Guillaume Stankowiak, Michail Stolpovskiy, Federico Suarez, Andrea Tartari, Jean Pierre Thermeau, Peter Timbie, Maurizio Tomasi, Steve A. Torchinsky, Matthieu Tristram, Carole E. Tucker, Gregory S. Tucker, Sylvain Vanneste, Daniele Viganò, Nicola Vittorio, Fabrice Voisin, Robert Watson, Francois Wicek, Mario Zannoni and Antonio Zulloadd Show full author list remove Hide full author list
Universe 2019, 5(2), 42; https://doi.org/10.3390/universe5020042 - 23 Jan 2019
Cited by 23 | Viewed by 6216
Abstract
In this paper, we describe QUBIC, an experiment that will observe the polarized microwave sky with a novel approach, which combines the sensitivity of state-of-the-art bolometric detectors with the systematic effects control typical of interferometers. QUBIC’s unique features are the so-called “self-calibration”, a [...] Read more.
In this paper, we describe QUBIC, an experiment that will observe the polarized microwave sky with a novel approach, which combines the sensitivity of state-of-the-art bolometric detectors with the systematic effects control typical of interferometers. QUBIC’s unique features are the so-called “self-calibration”, a technique that allows us to clean the measured data from instrumental effects, and its spectral imaging power, i.e., the ability to separate the signal into various sub-bands within each frequency band. QUBIC will observe the sky in two main frequency bands: 150 GHz and 220 GHz. A technological demonstrator is currently under testing and will be deployed in Argentina during 2019, while the final instrument is expected to be installed during 2020. Full article
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55 pages, 5594 KiB  
Review
Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices
by Alessandro S. Spinelli, Christian Monzio Compagnoni and Andrea L. Lacaita
Computers 2017, 6(2), 16; https://doi.org/10.3390/computers6020016 - 21 Apr 2017
Cited by 79 | Viewed by 28847
Abstract
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed [...] Read more.
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes. Full article
(This article belongs to the Special Issue 3D Flash Memories)
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