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Journal: Microelectronics, 2026
Volume: 2
Number: 11

Article: Mitigation of the Row-Hammer Effect in Sub-20 nm Dynamic Random-Access Memory (DRAM) Using Low-k Dielectrics
Authors: by Jeongbeen Park, Dongseok Oh, Jae Yeon Park, Dongjun Jang and Sangwan Kim
Link: https://www.mdpi.com/3042-5344/2/3/11

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