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Lee H-J, Lee G-H, Chung S-H, Byun D-W, Schweitz MA, Chun DH, Joo NY, Lim M, Erlbacher T, Koo S-M. Improved Properties of Post-Deposition Annealed Ga₂O₃/SiC and Ga₂O₃/Al₂O₃/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering. Micro. 2023; 3(4):775-784. https://doi.org/10.3390/micro3040055

Lee, Hee-Jae, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, and Sang-Mo Koo. 2023. "Improved Properties of Post-Deposition Annealed Ga₂O₃/SiC and Ga₂O₃/Al₂O₃/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering" Micro 3, no. 4: 775-784. https://doi.org/10.3390/micro3040055

Lee, H.-J., Lee, G.-H., Chung, S.-H., Byun, D.-W., Schweitz, M. A., Chun, D. H., Joo, N. Y., Lim, M., Erlbacher, T., & Koo, S.-M. (2023). Improved Properties of Post-Deposition Annealed Ga₂O₃/SiC and Ga₂O₃/Al₂O₃/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering. Micro, 3(4), 775-784. https://doi.org/10.3390/micro3040055