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Journal: Eng. Proc., 2025
Volume: 120
Number: 8

Article: Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors
Authors: by Yu-Chen Liu, Dian-Ying Wu, Hung-Cheng Hsu, I-Hsuan Wang and Meng-Chyi Wu
Link: https://www.mdpi.com/2673-4591/120/1/8

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