Order Article Reprints

Ali T, Kühnel K, Olivo R, Lehninger D, Müller F, Lederer M, Rudolph M, Oehler S, Mertens K, Hoffmann R, et al. Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage. Electronic Materials. 2021; 2(3):344-369. https://doi.org/10.3390/electronicmat2030024

Ali, Tarek, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, and et al. 2021. "Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage" Electronic Materials 2, no. 3: 344-369. https://doi.org/10.3390/electronicmat2030024

Ali, T., Kühnel, K., Olivo, R., Lehninger, D., Müller, F., Lederer, M., Rudolph, M., Oehler, S., Mertens, K., Hoffmann, R., Zimmermann, K., Schramm, P., Metzger, J., Binder, R., Czernohorsky, M., Kämpfe, T., Seidel, K., Müller, J., Van Houdt, J., & Eng, L. M. (2021). Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage. Electronic Materials, 2(3), 344-369. https://doi.org/10.3390/electronicmat2030024