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Journal: Electronic MaterialsVolume: 2Number: 24
Article: Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage
  • Authors:
  • Tarek Ali1,*,
  • Kati Kühnel1 and
  • Ricardo Olivo1
  • et al.
Link: https://www.mdpi.com/2673-3978/2/3/24

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