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Proceedings 2018, 2(13), 912;

A Novel Bi-Stable MEMS Membrane Concept Based on a Piezoelectric Thin Film Actuator for Integrated Switching

Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria
Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Author to whom correspondence should be addressed.
Published: 16 January 2019
(This article belongs to the Proceedings of Eurosensors 2018)
PDF [575 KB, uploaded 16 January 2019]


This study reports on a novel bi-stable actuator with an integrated aluminum nitride (AlN) piezoelectric layer sandwiched between two electrodes. To achieve bistability, the membranes must exceed a characteristic compressive stress value, also called the critical stress. For this purpose, we used highly c-axis orientated stress-controlled AlN with a thickness of 400 nm. First experiments showed, that it is possible to switch between the two stable ground states with at least two rectangular pulses at a frequency of 80 kHz and with a voltage Vpp of 40 V, resulting in a displacement of about 10 µm for each switching direction.
Keywords: piezoelectric; bi-stable; membrane; AlN piezoelectric; bi-stable; membrane; AlN
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Dorfmeister, M.; Kössl, B.; Schneider, M.; Schmid, U. A Novel Bi-Stable MEMS Membrane Concept Based on a Piezoelectric Thin Film Actuator for Integrated Switching. Proceedings 2018, 2, 912.

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