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Open AccessProceedings

A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
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Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Proceedings 2018, 2(13), 798; https://doi.org/10.3390/proceedings2130798
Published: 22 November 2018
(This article belongs to the Proceedings of Eurosensors)
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.
Keywords: CMOS image sensor (CIS); time-of-flight (ToF); silicon-on-insulator (SOI); back-side-illuminator (BSI) CMOS image sensor (CIS); time-of-flight (ToF); silicon-on-insulator (SOI); back-side-illuminator (BSI)
MDPI and ACS Style

Lee, S.; Yasutomi, K.; Nam, H.H.; Morita, M.; Kawahito, S. A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application. Proceedings 2018, 2, 798.

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