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Open AccessProceedings

Sensitivity Comparison of Integrated Mid-Infrared Silicon-Based Photonic Detectors

1
CTR Carinthian Tech Research AG, 9524 Villach, Austria
2
Institute for Microelectronics and Microsensors, Johannes Kepler University Linz, 4040 Linz, Austria
3
Infineon Technologies Austria AG, 9500 Villach, Austria
*
Author to whom correspondence should be addressed.
Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Proceedings 2018, 2(13), 796; https://doi.org/10.3390/proceedings2130796
Published: 30 November 2018
(This article belongs to the Proceedings of EUROSENSORS 2018)
Integrated silicon photonics in the mid-infrared is a promising platform for cheap and miniaturized chemical sensors, including gas and/or liquid sensors for environmental monitoring and the consumer electronics market. One major challenge in integrated photonics is the design of an integrated detector sensitive enough to detect minimal changes in light intensity resulting from, for example, the absorption by the analyte. Further complexity arises from the need to fabricate such detectors at a high throughput with high requirements on fabrication tolerances. Here we analyze and compare the sensitivity of three different chip-integrated detectors at a wavelength of 4.17 µm, namely a resistance temperature detector (RTD), a diode and a vertical-cavity enhanced resonant detector (VERD).
Keywords: silicon photonics; mid-infrared detectors; cavity-enhanced resonant detector; integrated photonics silicon photonics; mid-infrared detectors; cavity-enhanced resonant detector; integrated photonics
MDPI and ACS Style

Consani, C.; Söllradl, T.; Ranacher, C.; Tortschanoff, A.; Rauter, L.; Pühringer, G.; Grille, T.; Irsigler, P.; Jakoby, B. Sensitivity Comparison of Integrated Mid-Infrared Silicon-Based Photonic Detectors. Proceedings 2018, 2, 796.

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