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Proceedings 2017, 1(4), 587;

High Sensitivity Piezogenerator Based on GaN Nanowires

Centre de Nanosciences et de Nanotechnologies-site Orsay, University Paris-Saclay, Bât. 220-Centre Scientifique d’Orsay, F-91405 Orsay, France
Centre de Nanosciences et de Nanotechnologies-site Marcoussis, University Paris-Saclay, Route de Nozay, F-91460 Marcoussis, France
GeePs, UMR 8507 CNRS-Centrale Supélec, University Paris-Sud et UPMC, 91192 Gif-sur-Yvette, France
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 7 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
PDF [1578 KB, uploaded 4 September 2017]


We report on a prototype of piezogenerator based on vertically-aligned GaN nanowires grown by Plasma-Assisted Molecule Beam Epitaxy (PAMBE). Our device generates a peak-to-peak voltage from 20 mV to 60 mV depending on the applied force. The output power density reaches 0.76 mW/cm3 which is of the same order of magnitude as the state-of-art value. Furthermore, the pressure applied to deform the nanowires is of the order of kPa, much less than that used in previous reports (which were of the order of MPa) utilizing ZnO nanowires for the power generation. Thus, an enhanced mechanic-electrical conversion efficiency has been achieved. Our GaN nanowire based devices are promising both for pressure sensing applications and for mechanic energy harvesting.
Keywords: GaN; nanowire; piezogenerator GaN; nanowire; piezogenerator
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Lu, L.; Jamond, N.; Lefeuvre, E.; Chrétien, P.; Houzé, F.; Travers, L.; Harmand, J.C.; Glas, F.; Gogneau, N.; Julien, F.H.; Tchernycheva, M. High Sensitivity Piezogenerator Based on GaN Nanowires. Proceedings 2017, 1, 587.

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