2.2. Magnetic Properties
Figure 4 represents the graph of the temperature dependence of the real part of AC susceptibility, χ′, for La
0.7Ba
0.3−xK
xMnO
3 (
x = 0 and 0.04) carried out under an AC field of 2 Oe and frequency of 325 Hz. The temperature in which the transition of ferromagnetic to paramagnetic state (FM–PM) occurs, known as Curie temperature (
TC), was determined based on the minimum value of dχ′/dT versus T plot [
30,
35]. In the present study, no drop in χ′ was observed, implying that both samples possibly exhibit larger
TC above 300 K. This behaviour is coherent with the earlier studies of the parent compound, which reported the value of
TC at 340 K [
26] and 348 K [
25]. Furthermore, we also note that instead of the drop, a kink in χ’ is observed around 180 K in our crystals, similar to the previous study of (La
0.70Ba
0.3MnO
3)
1−x/(Al
2O
3)
x [
36]. Additional measurement of the magnetization curve (
M–
H) was performed to verify the magnetic behaviour for both samples at 300 K using a vibrating sample magnetometer (VSM). The result is presented in
Figure 5. The S-shape curve’s appearance for both samples indicates ferromagnetic behaviour [
37]. The inset of
Figure 5 shows an enlarged view in
M–
H hysteresis loops, signifying the FM ordering of the samples [
38]. The magnetization increased sharply at a low magnetic field for both samples; nonetheless, the value of saturation magnetization,
Ms, increased from 1.81
/f.u. to 4.11
/f.u. for
x = 0 and
x = 0.04, respectively (
Table 3). The rise in the
Ms value and electronic bandwidth,
W, by K
+ substitution indicates the increasing overlapping of Mn-3d orbital ions with the O-2p orbital, thereby leading to the increase in effective FM interaction between Mn ions [
9,
31]. Moreover, the increasing Mn–O–Mn bond angle (listed in
Table 1) possibly contributed to stronger FM, as highlighted in a previous study of Nd
0.7−xLa
xSr
0.3MnO
3 [
11]. Apart from that, the enhancement in magnetic properties can likewise arise from the enlargement of grain size with K
+ substitution. According to Ibrahim et al. [
39], compounds consisting of larger grain sizes with smaller grain boundaries exhibit a reduction in magnetic inhomogeneities, hence promoting the growth of the FM phase. On the other hand, the small value of coercivity,
Hc, is associated with the magnetic domains, which can be rotated easily in the direction of a magnetic field [
32]. The obtained values of saturation magnetization,
Ms, and coercivity,
Hc, are listed in
Table 3.
2.3. Electrical Properties
Figure 6 displays the temperature dependence of resistivity (
ρ) data for La
0.7Ba
0.3−xK
xMnO
3 (
x = 0 and 0.04) at 0 T. Interestingly, the metal–insulator transition temperature,
TMI increased from 257 K (
x = 0) to 271 K (
x = 0.04), while the peak value of resistivity decreased from 14.5 ohm.cm (
x = 0) to 0.08 ohm.cm (
x = 0.04). The reduction in
ρ could be attributed to the rise in the Mn–O–Mn bond angle (°) and increased bandwidth, W, with increasing <
rA> (see
Table 1). Based on
Table 1, K
+ substitution increased the Mn–O–Mn bond angle and reduced the Mn–O bond length. This observed behaviour may facilitate the transfer of e
g conduction electrons and enhance the delocalization of charge carriers. As a result, the electron mobility improves because the e
g hopping process from Mn
3+ to Mn
4+ in the Mn
3+–O
2−–Mn
4+ double-exchange (DE) process is enhanced, leading to a reduction in resistivity. This is also evidenced by the increased bandwidth with K
+ (
Table 1). The increasing value of W signifies that the overlapping between 3d-manganese and 2p-oxygen orbitals increased, thus favouring the transfer interaction of e
g electrons between neighbouring Mn-sites [
40]. Therefore, the strength of DE interaction in the La
0.7Ba
0.3−xK
xMnO
3 (
x = 0 and 0.04) system becomes stronger and
TMI shifts to a higher temperature. Further, the reduction of grain boundaries effect may also contribute to the decrease in
ρ. It can be seen that magnitude of
ρ is lowered by several orders (10
−2 Ω·cm) with K
+ substitution, which can be compared to the ceramic and single-crystal LCMO [
41]. For granular systems, larger grain size may reduce the scattering at grain boundaries, which improves electron mobility and electrical conductivity [
39,
42]. Notably, the increase in grain size value and reduced grain boundaries for sample
x = 0.04 indicates the rise in the conduction channel for e
g electrons’ transfer to move between grains, which may also aid the DE process. These factors together may contribute to the significant decrease in resistivity. Similar findings were also discussed by Siwach et al. [
43] and Huang et al. [
41]. The obtained results are in good accordance with those interpreted in previous works [
39,
42].
Figure 7a,b shows the resistivity data for both samples with the absence and the presence of the magnetic field. At 0.8 T, resistivity for both samples is found to be decreased. This observed behaviour indicates the enhancement of delocalization related to the increased rate of e
g itinerant hopping, alongside the improvement in charge carriers’ mobility in the DE process [
44,
45,
46]. The suppression of resistivity under the applied field could be interpreted by analyzing the influence of the magnetic field on the alignment of magnetic spins [
30]. It is known that when the magnetic field is applied, the spin disorder is suppressed, and Mn spins within the disordered region realign along the field direction. Accordingly, more spins are ferromagnetically coupled, and the transfer of itinerant electrons in Mn
3+–O
2−–Mn
4+ is favoured, resulting in the improvement in electrical conductivity [
17,
21,
44]. Nevertheless, the
TMI for both samples remained unchanged upon applying an external magnetic field, in contrast with the previous report of Nd
0.6Sr
0.4−xK
xMnO
3 [
9], where
TMI slightly shifted to a higher temperature.
The temperature dependence of resistivity data can be divided into two regions: metallic (
T <
TMI) and insulating region (
T >
TMI), in which the nature of electrical conduction through the scattering process is more dominant in the former, while the hopping mechanism is more dominant in the latter [
47]. In the metallic region (
T <
TMI), the resistivity data for both samples at 0
T and 0.8
T were fitted according to the following equation [
5,
36,
48]:
where
ρ0 is the residual resistivity due to scattering by impurities, defects, grain boundaries, or domain walls;
ρ2 arises from electron–electron scattering; and
ρ4.5 is a resistivity factor due to electron–magnon scattering processes [
5,
36,
48,
49]. The data fit well and are of high quality with the square value of the linear correlation coefficient,
R2~99.9%. The related scattering parameters are listed in
Table 4. Parameter
yielded the highest value compared to
and
for both samples, indicating that the residual resistivity due to the grain boundary is more significant in the conduction process in the metallic region. It is also noticed that the residual resistivity decreases by more than two orders of magnitude. As evidenced in the XRD and SEM-EDX results, both investigated samples are well-crystallized. Thus, the contribution of impurities may not be responsible for such a reduction. This could be due to the additional influence of sample porosity, in addition to the grain boundary effect [
30]. In the present study, the decreasing porosity with K
+ substitution may also increase the electron transport channels. As seen in
Figure 3b, grains in the K
+-substituted sample become more tightly packed, and hence the transfer of e
g electrons between grains makes it easier to enhance the DE process [
50]. Consequently, a drastic reduction in
as well as resistivity in the K-substituted sample is observed (
Figure 7a,b). On the other hand, the small value of
could be attributed to the smaller spin inhomogeneity [
30]. According to the increasing tolerance factor (
Table 1), K
+ increases the stability of the perovskite system and possibly causes a decline in spin fluctuations. As reported by Sangeetha et al., the carrier scattering by thermal spin fluctuations plays an important role in the resistivity drop below
TMI [
51]. Since parameter
represent the resistivity factor due to electron–magnon scattering, the substitution of non-magnetic K
+ possibly reduced the spin wave effect as well as spin fluctuations [
52]; as a result, the value of
decreased. A similar finding related to the obtained
value was also reported in the study of La
0.7−xY
xBa
0.3Mn
1−xFe
xO
3 [
53], La
0.7−xBi
xSr
0.3MnO
3 [
52]
, and La
0.65−xBi
xCa
0.35MnO
3 [
48]. Based on
Table 4, parameters
and
are reduced with
x due to the increase in grain size associated with the reduction in grain boundaries [
30,
42], which corresponded well to our SEM analysis result in
Figure 3a,b.
Generally, all scattering parameters were observed to be reduced with K
+, evidencing that charge carriers experience less scattering and the rate of e
g transfer between Mn ions in the DE process increases. The magnetic field application (0.8 T) further minimizes the scattering of charge carriers due to the parallel spin alignment of e
g in the Mn–O–Mn network. Therefore, exchanges of interaction between Mn-sites increase and lead to the improvement in electrical conduction. Our result is consistent with the previous studies of electrical resistance in manganites under the influence of a magnetic field [
44,
45,
46].
On the other hand, the conduction mechanism in the insulating region has been described through well-established hopping models: small polaron hopping (SPH) at
T >
θD/2 (
θD is Debye’s temperature) and variable range hopping (VRH) at
T <
θD/2. SPH is usually considered in the high-temperature insulating region, where thermal energy is sufficient to assist the hopping of charge carriers to their nearest neighbours with high mobility [
21,
54]. Small polaron hopping is expressed using the following equation [
25]:
where
Ea is the activation energy and
kB is Boltzmann’s constant. The values of
Ea for both samples are determined by the slope of ln (
/T) versus 1000/T curves, as shown in
Figure 8a,b and the values are listed in
Table 5. A reduction in
Ea was observed from 48.39 meV (
x = 0) to 40.07 meV (
x = 0.04), implying that K
+ enhanced the delocalization of e
g electrons due to the reduction in grain-boundary effects and the widening of the e
g electron bandwidth. As a result, the possibility of the conduction electron hopping to neighbouring sites was enhanced, thereby reducing the values of
Ea. As the magnetic field is applied, the value of
Ea for both samples is further decreased. This behaviour signifies the weakening of attraction between lattice and electrons in the form of polarons, hence assisting the conductivity of e
g carriers through the hopping process. The reduction in
Ea for both samples at 0.8 T is in agreement with the trend of decreasing resistivity observed in
Figure 7a,b.
Unlike the conduction mechanism described using the SPH model, the thermal energy is not large enough to allow electrons to hop to their nearest neighbours in a low-temperature insulating region. Therefore, it needs to hop further to find a site with a smaller potential difference [
49,
53]. In this case, variable range hopping (VRH) is more appropriate to illustrate the transport mechanism, which can be described by the following equation [
55]:
where
is Mott’s residual resistivity and
is Mott’s temperature.
is obtained from the gradient of ln (
) versus T
1/4 plots (see
Figure 9a,b), which can further be applied to determine the value of the charge carrier density of state (DOS) near the Fermi level
N(E
f), hopping energy
Eh, and hopping distance
Rh [
21,
55]. Here,
and
each represent the localization length at
= 4.5 Å and Boltzmann’s constant, respectively [
55]. The linear fit using Equation (6) presents a straight line with
R2~99.9%, satisfying the VRH mechanism.
The parameters related to the VRH model are listed in
Table 5. It can be seen that the value of
decreases from 1.291 × 10
6 K (
x = 0) to 0.646 × 10
6 K (
x = 0.04) when K
+ is substituted into the compound. Moreover, one can observe that the values of
Eh and
Rh decrease with K
+ (
Table 5), whereas the value of
N(
EF) increases. Such an increase in
N(
EF) reflects the increase in the density of states and the number of available hopping sites for the charge carriers. In the present study, it is suggested that K
+ substitution enhanced the interconnectivity between the grains as the grain size rose. Consequently, the hopping process becomes easier as the e
g electron does not require large energy (
Eh) to hop to a site beyond the nearest neighbour. The average hopping length is smaller than the average distance between the sites [
53], and therefore, the hopping distance (
Rh) decreased with K
+ substitution. Based on
Table 5, both
Rh and
Eh were found to be decreased in the presence of a magnetic field, indicating the enhancement in delocalization while increasing the charge carrier density,
N(
EF), to enhance the hopping process and conductivity in the insulating region. These results agreed well with the reduction in resistivity observed in
Figure 7a,b. Moreover, the obtained values of
N(
EF) were in the range of DOS at the Fermi level reported previously in other manganite systems [
27,
56,
57].
2.4. Magnetoresistance (MR)
Magnetoresistance (
MR) is calculated by the following equation [
9,
58]:
where
ρ(0) and
ρ(
H) are the resistivity under zero magnetic field (0 T) and applied magnetic field (0.8 T), respectively.
Figure 10 illustrates the temperature dependence of MR (%) under H = 0.8 T and its value at three respective temperatures; 30 K,
TMI, and 300 K, which are tabulated in
Table 6. MR has been previously discussed with respect to different contributions: intrinsic and extrinsic [
28,
42,
44]. For the intrinsic MR effect, the spin ordering due to the suppression of spin fluctuations is responsible for explaining resistivity reduction under an applied magnetic field [
13,
28,
42]. On the other hand, the extrinsic MR effect is explained based on spin-polarized tunnelling (SPT) related to the scattering of carriers at the grain boundaries. It is often discussed in polycrystalline granular systems [
21,
37,
42,
44]. As the electrons move between grains, they may encounter an insulating barrier consisting of disordered and scattered Mn spins, reducing connectivity among the grains. The application of a magnetic field may overcome the scattering effects [
30,
44]. As a result, the MR effect is observed at low temperatures. At 30 K, the MR (%) significantly increased from 3.25% (
x = 0) to 25% (
x = 0.04). As discussed above, this behaviour could be ascribed to the influence of the extrinsic MR effect, whereby the SPT across grain boundaries is more dominant [
37,
58,
59]. Grain boundaries acted as barriers to charge transport at zero field and restricted the tunnelling process due to disordered Mn spins [
37]. In this study, a small substitution of K
+ possibly improved the spin alignment of the charge carrier at the grain boundaries region, and it was further enhanced with the application of a magnetic field. The realignment of disordered Mn spins in the grain boundary regions may reduce the magnetic disorder and facilitate the increase in intergrain SPT; thus, the MR effect is enhanced [
30,
58]. Meanwhile, the rise in MR (%) in the vicinity of
TMI from 2.75% (
x = 0) to 5.31% (
x =0.04) possibly arose from the increase in the DE interactions as a result of the parallel alignment of spin at Mn–O–Mn couplings under magnetic field [
30,
58]. The similar behaviour of increased MR at
TMI region due to enhanced DE has also been reported in La
0.65Ca
0.35−xLi
xMnO
3 [
44] and La
0.5Nd
0.15Ca
0.25A
0.1MnO
3 (A = Ca, Li, Na, K) [
60]. The highest MR (%) observed at 30 K for sample
x = 0.04 indicates that the extrinsic MR effect related to spin-polarized tunnelling is more pronounced in this system. For a small concentration of K
+ at
x = 0.04, the enhancement in the MR (%) value observed at 300 K from 3.01 % (
x = 0) to 4.24% (
x = 0.04) in a moderately low applied field gives this system a future prospect for advancement in room-temperature technological applications.
In brief, K+ substitution in the La0.7Ba0.3MnO3 system enhanced the electrical conductivity and strengthened the magnetic interactions, which are suggested to be due to the improvement in microstructure, changes in bond angle, and increased hopping probability of the eg conduction electrons. Since K+ contributes to the rise of the MR effect, even under a low applied magnetic field, we believe that the present work is of considerable significance for the application of magnetic field sensors.