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Open AccessFeature PaperArticle

Neutron Imaging with Timepix Coupled Lithium Indium Diselenide

Department of Nuclear Engineering, The University of Tennessee, 308 Pasqua Engineering Building, Knoxville, TN 37996, USA
Y-12 National Security Complex, New Hope Center, 602 Scarboro Road, Oak Ridge, TN 37830, USA
Department of Life and Physical Sciences, Fisk University, 1000 17th Avenue N., Nashville, TN 37208, USA
Author to whom correspondence should be addressed.
J. Imaging 2018, 4(1), 10;
Received: 31 October 2017 / Revised: 12 December 2017 / Accepted: 14 December 2017 / Published: 29 December 2017
(This article belongs to the Special Issue Neutron Imaging)
The material lithium indium diselenide, a single crystal neutron sensitive semiconductor, has demonstrated its capabilities as a high resolution imaging device. The sensor was prepared with a 55 μ m pitch array of gold contacts, designed to couple with the Timepix imaging ASIC. The resulting device was tested at the High Flux Isotope Reactor, demonstrating a response to cold neutrons when enriched in 95% 6 Li. The imaging system performed a series of experiments resulting in a <200 μ m resolution limit with the Paul Scherrer Institute (PSI) Siemens star mask and a feature resolution of 34 μ m with a knife-edge test. Furthermore, the system was able to resolve the University of Tennessee logo inscribed into a 3D printed 1 cm 3 plastic block. This technology marks the application of high resolution neutron imaging using a direct readout semiconductor. View Full-Text
Keywords: lithium indium diselenide; neutron imaging; semiconductor detector; thermal neutron imaging; timepix imager lithium indium diselenide; neutron imaging; semiconductor detector; thermal neutron imaging; timepix imager
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Herrera, E.; Hamm, D.; Stowe, A.; Preston, J.; Wiggins, B.; Burger, A.; Lukosi, E. Neutron Imaging with Timepix Coupled Lithium Indium Diselenide. J. Imaging 2018, 4, 10.

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