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Article

A Comparative Study of the ZnO Growth on Graphene and Graphene Oxide: The Role of the Initial Oxidation State of Carbon

1
Departamento de Física Aplicada and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, Francisco Tomás y Valiente 7, E-28049 Madrid, Spain
2
SEPI-UPIITA, Instituto Politécnico Nacional, 07340 Ciudad de México, Mexico
3
Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, Konrad-Zuse-Strasse 1, D-03046 Cottbus, Germany
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Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
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Instituto de Cerámica y Vidrio, ICV-CSIC, Kelsen 5, E-28049 Madrid, Spain
6
IMDEA Nanociencia, Faraday 9, E-28049 Madrid, Spain
*
Author to whom correspondence should be addressed.
Received: 31 May 2020 / Revised: 14 June 2020 / Accepted: 17 June 2020 / Published: 20 June 2020
(This article belongs to the Special Issue Surface Modification of Carbons)
The role of the oxidation state of carbon on the early stages of growth of metal oxides was studied for the particular case of ZnO deposition on graphene and graphene oxide on SiO2 (G/SiO2 and GO/SiO2, respectively) substrates. The growth was carried out by thermal evaporation of metallic Zn under an oxygen atmosphere at room temperature. This technique permits quasi-equilibrium conditions during the oxide growth, allowing the characterization of the fundamental interaction between ZnO and the graphene-based substrates. Although in both cases ZnO follows a Volmer–Weber growth mode controlled by nucleation at defects, the details are different. In the case of the GO/SiO2 substrate, the nucleation process acts as a bottleneck, limiting the coverage of the complete surface and allowing the growth of very large ZnO structures in comparison to G/SiO2. Moreover, by studying the Zn-LMM Auger spectra, it is shown how the initial nature of the substrate influences the composition of the ZnO deposit during the very early stages of growth in terms of Zn/O atomic ratio. These results are compared to those previously reported regarding ZnO growth on graphite and graphene on Cu (G/Cu). This comparison allows us to understand the role of different characteristics of graphene-based substrates in terms of number of defects, oxidation state, graphene support substrate and number of graphene layers. View Full-Text
Keywords: graphene; graphene oxide; zinc oxide; interfaces; mode of growth; XPS; AFM; factor analysis graphene; graphene oxide; zinc oxide; interfaces; mode of growth; XPS; AFM; factor analysis
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MDPI and ACS Style

Gomez-Alvarez, M.A.; Morales, C.; Méndez, J.; del Campo, A.; Urbanos, F.J.; Díaz, A.; Reséndiz, L.; Flege, J.I.; Granados, D.; Soriano, L. A Comparative Study of the ZnO Growth on Graphene and Graphene Oxide: The Role of the Initial Oxidation State of Carbon. C 2020, 6, 41. https://doi.org/10.3390/c6020041

AMA Style

Gomez-Alvarez MA, Morales C, Méndez J, del Campo A, Urbanos FJ, Díaz A, Reséndiz L, Flege JI, Granados D, Soriano L. A Comparative Study of the ZnO Growth on Graphene and Graphene Oxide: The Role of the Initial Oxidation State of Carbon. C. 2020; 6(2):41. https://doi.org/10.3390/c6020041

Chicago/Turabian Style

Gomez-Alvarez, Miguel A., Carlos Morales, Javier Méndez, Adolfo del Campo, Fernando J. Urbanos, Aarón Díaz, Luis Reséndiz, Jan I. Flege, Daniel Granados, and Leonardo Soriano. 2020. "A Comparative Study of the ZnO Growth on Graphene and Graphene Oxide: The Role of the Initial Oxidation State of Carbon" C 6, no. 2: 41. https://doi.org/10.3390/c6020041

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