Electric Field Sensor Based on High Q Fano Resonance of Nano-Patterned Electro-Optic Materials
Round 1
Reviewer 1 Report
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Author Response
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Reviewer 2 Report
In this paper, the electric field sensor based on two electro-optical (EO) materials i.e. barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) combined with nanostructure is studied. For the electric field sensor based on BTO, a configuration of filling the BTO nanoparticles into a nano-patterned thin film silicon was proposed. In the design of electric field sensor based on PMN-PT, a configuration by combining two square lattice air holes in PMN-PT thin film but with one offsetting hole center is chosen. The nano array electric field sensors studied are all dielectric, which have the advantages of large measurement bandwidth, high measurement fidelity, high spatial resolution and high sensitivity. The research content has certain reference value.
The problems in this paper are as follows:
(1) This paper only gives the simulation results, and does not show the physical pictures of the sensor and the comparison between the simulation results and the test results. Please give some physical pictures if possible;
(2) In the comparison of footprint size, operating wavelength, quality factor Q, sensitivity S and the minimum detectable electric field Emin between BTO nanoparticles and PMN-PT thinfilm and the references [13][32][33][34] given in Table 3, the author gives simulation results, while the references give actual test results. How can they be compared together? Please explain.
Author Response
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Reviewer 3 Report
In the manuscript titled “Electric field sensor based on High Q Fano resonance of nano-patterned electro-optic materials”, the authors present two EO material BTO and PMN-PT based nanostructure E-field sensor. The minimum detectable field, BW and nanostructure induced field enhancement are analyzed. The paper should be edited with the help of a native English speaker in order to make it easier for the reader grasp the ideas presented by the authors. However, the idea of systematically studied nanostructure combined with new EO material i.e. BTO and PMN-PT are novel and the results of employing them as an E-field sensor are presented. These results will be of interest to many readers in the optical community such as EO electric field sensors, EO modulators and EO tunable optical devices. The feasible fabrication method are discussed. It might lead to new devices which were not possible until now. Therefore, I believe that this paper should be accepted for publication in Photonics after concerning and correcting the following mentioned comments:
1、 The simulation here considers only a structure of infinite size, why not finite structure ? Does the spatial resolution of the E-field sensor depends on the size of the structure? If so, could the author give an analysis of the performance of the E-field sensor with finite structure ?
2、 PMN-PT has not been well exploited in optical device, is it because its transparency? Is there any solution to improve the transparency of this material? There are higher electro-optical coefficient of PMN-PT reported in the literature, why 112 pm/V was chosen as its electro-optic coefficient？
3、 Is there any nano-patterned PMN-PT been reported such as electro-optic device? Could the author include the fabrication feasibility for nanostructured PMN-PT?
4、 Regarding to BTO based EO device, one concern is the direction of the spontaneous polarization. Should the author consider poling before using these nanoparticle based structure? More explanation should be added.
5、 There are many typo error in the text, such as page 2 line 54 “Relaxor ferroelectric crystal (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ((1-x)PMN-xPT) have been...” Should read “Relaxor ferroelectric crystal (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ((1-x)PMN-xPT) has been...”,
page 9 line 262 “BTO nanoparticles and PMN-PT thinfilm” should read “BTO nanoparticles and PMN-PT thin film”, page 10 in Table 3 numbers should be added with a comma in every thousand digits. Please carefully find them out and correct.
Author Response
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Round 2
Reviewer 2 Report
The revised manuscript of the paper has modified some problems raised by the reviewers, but has not added the physical picture of the electric field sensor.
Author Response
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