Lithographic Mask Defects Analysis on an MMI 3 dB Splitter †
1
Departamento de Engenharia Eletrotécnica, FCT, Universidade Nova de Lisboa, Campus da Caparica, Faculdade de Ciências e Tecnologia, 2829-516 Caparica, Portugal
2
CTS-UNINOVA, Departamento de Engenharia Eletrotécnica, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica, Portugal
3
ISEL—Instituto Superior de Engenharia de Lisboa, Instituto Politécnico de Lisboa, Rua Conselheiro Emídio Navarro, 1, 1959-007 Lisboa, Portugal
*
Author to whom correspondence should be addressed.
†
This paper is an extended version of our paper published in: SPIE Paper Number: AOP100-40. Lourenço, P.; Fantoni, A.; Vieira, M. Simulation analysis of a thin film semiconductor MMI 3 dB splitter operating in the visible range. In Proceedings of AOP 2019, IV International Conference on Applications of Optics and Photonics, Lisbon, Portugal, 31 May–4 June 2019.
Photonics 2019, 6(4), 118; https://doi.org/10.3390/photonics6040118
Received: 8 October 2019
/
Revised: 2 November 2019
/
Accepted: 5 November 2019
/
Published: 9 November 2019
(This article belongs to the Special Issue Advances on Applications of Optics and Photonics – Selected Papers from the 4th International Conference on Applications of Optics and Photonics, AOP2019)
In this paper, we present a simulation study that intends to characterize the influence of defects introduced by manufacturing processes on the geometry of a semiconductor structure suitable to be used as a multimode interference (MMI) 3 dB power splitter. Consequently, these defects will represent refractive index fluctuations which, on their turn, will drastically affect the propagation conditions within the structure. Our simulations were conducted on a software platform that implements the Beam Propagation numerical method. This work supports the development of a biomedical plasmonic sensor, which is based on the coupling between propagating modes in a dielectric waveguide and the surface plasmon mode that is generated on an overlaid metallic thin film, and where the output readout is achieved through an a-Si:H photodiode. By using a multimode interference 1 × 2 power splitter, this sensor device can utilize the non-sensing arm as a reference one, greatly facilitating its calibration and enhancing its performance. As the spectral sensitivity of amorphous silicon is restricted to the visible range, this sensing device should be operating on a wavelength not higher than 700 nm; thus, a-SiNx has been the material hereby proposed for both waveguides and MMI power splitter.
View Full-Text
Keywords:
a-SiNx; beam propagation method; multimode interference; 3 dB splitter
▼
Show Figures
Figure 1
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
MDPI and ACS Style
Lourenço, P.; Fantoni, A.; Costa, J.; Vieira, M. Lithographic Mask Defects Analysis on an MMI 3 dB Splitter. Photonics 2019, 6, 118. https://doi.org/10.3390/photonics6040118
AMA Style
Lourenço P, Fantoni A, Costa J, Vieira M. Lithographic Mask Defects Analysis on an MMI 3 dB Splitter. Photonics. 2019; 6(4):118. https://doi.org/10.3390/photonics6040118
Chicago/Turabian StyleLourenço, Paulo, Alessandro Fantoni, João Costa, and Manuela Vieira. 2019. "Lithographic Mask Defects Analysis on an MMI 3 dB Splitter" Photonics 6, no. 4: 118. https://doi.org/10.3390/photonics6040118
Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
