A Monolithically Integrated Laser-Photodetector Chip for On-Chip Photonic and Microwave Signal Generation
1
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
*
Author to whom correspondence should be addressed.
Photonics 2019, 6(4), 102; https://doi.org/10.3390/photonics6040102
Received: 29 August 2019 / Revised: 20 September 2019 / Accepted: 29 September 2019 / Published: 30 September 2019
(This article belongs to the Special Issue Semiconductor Laser Dynamics: Fundamentals and Applications)
An Indium-phosphide-based monolithically integrated photonic chip comprising of an amplified feedback laser (AFL) and a photodetector was designed and fabricated for on-chip photonic and microwave generation. Various waveforms including single tone, multi-tone, and chaotic signal generation were demonstrated by simply adjusting the injection currents applied to the controlling electrodes. The evolution dynamics of the photonic chip was characterized. Photonic microwave with frequency separation tunable from 26.3 GHz to 34 GHz, chaotic signal with standard bandwidth of 12 GHz were obtained. An optoelectronic oscillator (OEO) based on the integrated photonic chip was demonstrated without using any external electrical filter and photodetector. Tunable microwave outputs ranging from 25.5 to 26.4 GHz with single sideband (SSB) phase noise less than −90 dBc/Hz at a 10-kHz offset from the carrier frequency were realized.
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Keywords:
photonic integrated circuit; microwave generation; laser dynamics; optoelectronics oscillator
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MDPI and ACS Style
Qi, H.; Chen, G.; Lu, D.; Zhao, L. A Monolithically Integrated Laser-Photodetector Chip for On-Chip Photonic and Microwave Signal Generation. Photonics 2019, 6, 102.
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