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Open AccessArticle

Bias Current of Semiconductor Laser: An Unsafe Key for Secure Chaos Communication

1
College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China
2
Institute of Advanced Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
*
Author to whom correspondence should be addressed.
Photonics 2019, 6(2), 59; https://doi.org/10.3390/photonics6020059
Received: 25 April 2019 / Revised: 23 May 2019 / Accepted: 28 May 2019 / Published: 29 May 2019
(This article belongs to the Special Issue Semiconductor Laser Dynamics: Fundamentals and Applications)
In this study, we have proposed and numerically demonstrated that the bias current of a semiconductor laser cannot be used as a key for optical chaos communication, using external-cavity lasers. This is because the chaotic carrier has a signature of relaxation oscillation, whose period can be extracted by the first side peak of the carrier’s autocorrelation function. Then, the bias current can be approximately cracked, according to the well-known relationship between the bias current and relaxation period of a solitary laser. Our simulated results have shown that the cracked current eavesdropper could successfully crack an encrypted message, by means of a unidirectional locking injection or a bidirectional coupling. In addition, the cracked bias current was closer to the real value as the bias current increased, meaning that a large bias current brought a big risk to the security. View Full-Text
Keywords: chaos; semiconductor lasers; chaotic communication; communication system security chaos; semiconductor lasers; chaotic communication; communication system security
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Wang, D.; Wang, L.; Li, P.; Zhao, T.; Jia, Z.; Gao, Z.; Guo, Y.; Wang, Y.; Wang, A. Bias Current of Semiconductor Laser: An Unsafe Key for Secure Chaos Communication. Photonics 2019, 6, 59.

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