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Photonics 2019, 6(2), 38;

Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique

Centre for Nanosciences and Nanotechnologies, CNRS UMR 9001, Université Paris-Sud, Université Paris-Saclay, 91120 Palaiseau, France
Laboratorio TASC, CNR-IOM, Area Science Park, I34149 Trieste, Italy
Authors to whom correspondence should be addressed.
Received: 8 February 2019 / Revised: 22 March 2019 / Accepted: 27 March 2019 / Published: 1 April 2019
PDF [1798 KB, uploaded 3 April 2019]


We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering. The former mechanism has been investigated as a function of the dopants position within a multiple GaAs/AlGaAs quantum well structure and compared to the transition of an undoped sample. The study on the latter scattering mechanism has been conducted using the growth interruption technique. We report an improvement of the intersubband (ISB) transition linewidth up to 11% by interrupting growth at GaAs-on-AlGaAs interfaces. As a result, the lifetime of intersubband polaritons could be improved up to 9%. This leads to a reduction of 17% of the theoretical threshold intensity for polaritonic coherent emission. This work brings a useful contribution towards the realization of polariton-based devices. View Full-Text
Keywords: Quantum wells; Intersubband transitions; Growth interruption; Modulation doping; Polaritons Quantum wells; Intersubband transitions; Growth interruption; Modulation doping; Polaritons

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Tran, N.L.; Biasiol, G.; Jollivet, A.; Bertocci, A.; Julien, F.H.; Manceau, J.-M.; Colombelli, R. Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique. Photonics 2019, 6, 38.

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