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Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Physics Department, Lancaster University, Lancaster LA1 4YB, UK
Author to whom correspondence should be addressed.
Photonics 2015, 2(2), 414-425;
Received: 27 February 2015 / Revised: 10 April 2015 / Accepted: 11 April 2015 / Published: 15 April 2015
(This article belongs to the Special Issue Quantum Dot Based Lasers and Photonic Devices)
PDF [615 KB, uploaded 15 April 2015]


In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures. View Full-Text
Keywords: quantum dots; mid-infrared; semiconductor lasers quantum dots; mid-infrared; semiconductor lasers

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Lu, Q.; Zhuang, Q.; Krier, A. Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers. Photonics 2015, 2, 414-425.

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