An Improved Robust Multibasin Profiling Framework with Physics-Protected Selective Structured-Residual Refinement for Thin-Film Thickness Inversion
Abstract
1. Introduction
2. Materials and Methods
2.1. Physics-Based Forward Model and Shared Nuisance Formulation
2.2. Constrained L2, Tukey Scoring, and Improved Robust Multibasin Profiling
2.2.1. Observation-Level Robust Scale and Tukey Loss
2.2.2. Reference Profiles and Improved Robust Multibasin Anchor
| Method | Nuisance Update | Residual Objective | Thickness Search/Routing | Structural Extension | Scientific Role |
|---|---|---|---|---|---|
| Bounded least-squares profile | Bounded L2 gain + baseline fit | L2 | Bounded thickness profile | None | Coupled L2 reference |
| Tukey-score profile | Bounded L2 fit; no robust nuisance re-update | Tukey score | Prespecified search | None | Robust-score ablation |
| Robust multibasin anchor | Bounded robust gain + baseline re-estimation | Tukey | Retained robust-profile minima + deterministic multibasin refinement | None | Primary robust thickness anchor |
| Proposed method | Anchor-centered local robust refit | Tukey + regularization | Selective local refinement with exact anchor fallback | Thickness-protected residual basis; | Optional protected refinement with selective gating |
2.3. Physics-Protected Structured-Residual Refinement with Selective Gating
2.3.1. First- and Second-Order Thickness-Sensitivity Protection
2.3.2. Protected Residual Model and Anchor-Centered Local Refinement
2.3.3. Selective Refinement Gate
2.3.4. Candidate Acceptance and Exact Anchor Fallback
2.4. Numerical Evidence Design
2.4.1. Mechanism Benchmark
2.4.2. Cross-Material Simulation Study
| System | Film | Substrate | Optical-Constant Treatment | True Thicknesses, d (nm) |
|---|---|---|---|---|
| A | Fused silica | N-BK7 | Analytic Sellmeier relations | 380, 520, 680 |
| B | SiO2 | Si | Frozen wavelength-dependent optical-constant tables | 380, 520, 680 |
| C | SiO2 buffer | Soda-lime glass | Frozen ε-to-(n,k) optical-constant data | 380, 520, 680 |
2.4.3. Refinement Development, Freeze, and Independent-Seed Validation
2.4.4. Controlled Comparative Benchmark
2.5. Physical SiO2/Si Measurement and Reference Characterization
| Item | Setting |
|---|---|
| Specimens | Five single-layer SiO2/Si films |
| Spectrometer | AvaSpec-VRS2048CL-EVO |
| Light source | AvaLight-DHc |
| Spectral configuration | MN0300-0.30 grating, 300 lines/mm; 100 μm entrance slit |
| Instrumental response | Gaussian, nominal FWHM ≈ 4.8 nm |
| Measurement geometry | Nominal 8° incidence; modeled effective angular range 6.8–8.7° |
| Analysis window | 420–780 nm; resampled to 1 nm spacing (361 points) |
| Spectral averaging | 10 acquisitions per dark, reference, and sample-position record |
| Spatial sampling | Three corresponding positions (P1–P3) per specimen; positions processed independently |
| Reference thickness | J.A. Woollam M-2000 ellipsometry; 400–1000 nm; 65°, 70°, and 75° |
2.6. Local Model-Parameter and Experimental-Scale Sensitivity Analysis
2.7. Statistical Estimands and Failure Accounting
2.8. Computational Implementation and Provenance
3. Results
3.1. Robust Multibasin Profiling Under Contamination and Competing Minima
3.2. Refinement Gains Depend on Protecting Thickness-Sensitive Directions
3.3. Selective Gating Controls Harmful Refinement
3.4. Paired Accuracy Gains Persist Across Contamination Scenarios
3.5. Physical-Film Results

| Specimen | P1 (nm) | P2 (nm) | P3 (nm) | Reflectance Mean ± SD (nm) | Ellipsometry Reference (nm) | AE (nm) | Relative Error (%) |
|---|---|---|---|---|---|---|---|
| S1 | 381.20 | 381.42 | 381.64 | 381.42 ± 0.22 | 381.74 | 0.32 | 0.08 |
| S2 | 447.65 | 447.58 | 447.93 | 447.72 ± 0.19 | 448.38 | 0.66 | 0.15 |
| S3 | 520.92 | 520.74 | 521.05 | 520.90 ± 0.16 | 521.46 | 0.56 | 0.11 |
| S4 | 602.74 | 602.08 | 602.52 | 602.45 ± 0.34 | 602.20 | 0.25 | 0.04 |
| S5 | 678.50 | 678.80 | 678.97 | 678.76 ± 0.24 | 678.67 | 0.09 | 0.01 |
3.6. Local Model-Parameter and Experimental-Scale Sensitivity
4. Discussion
4.1. Interpretation of Robust Multibasin Profiling under Contamination and Competing Minima
4.2. Protecting Thickness-Sensitive Directions During Refinement
4.3. Selective Gating Separates Candidate Generation from Permission to Modify the Anchor
4.4. Experimental Validation on Measured SiO2/Si Specimens
4.5. Local Model Sensitivity
4.6. Practical Implications, Limitations, and Future Work
5. Conclusions
Supplementary Materials
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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| Condition | Gaussian SD | Outliers | Nominal Outlier Magnitude | Baseline Amplitude | Gain SD | Offset SD |
|---|---|---|---|---|---|---|
| Gaussian | 0.0008 | 0 | 0 | 0 | 0.005 | 0.0002 |
| Impulsive | 0.0004 | 4% (14/361) | 0.012 | 0 | 0.005 | 0 |
| Baseline drift | 0.0004 | 0 | 0 | 0.0035 | 0.005 | 0 |
| Mixed | 0.0008 | 6% (22/361) | 0.015 | 0.0035 | 0.008 | 0.0003 |
| Arm | Mean Absolute Error (nm) | Accepted | Improved | Harmed | Harmful Among Accepted |
|---|---|---|---|---|---|
| Robust multibasin anchor | 0.223465 | 0 | 0 | 0 | — |
| Unprotected residual refinement | 0.223613 | 3287 | 2017 | 1270 | 38.64% |
| First-order protected refinement | 0.217689 | 3168 | 2067 | 1101 | 34.75% |
| Fixed full second-order protection | 0.226053 | 3047 | 1887 | 1160 | 38.07% |
| Adaptive protected refinement | 0.216601 | 2976 | 2053 | 923 | 31.01% |
| Proposed selective protected refinement | 0.194634 | 2410 | 1915 | 495 | 20.54% |
| Specimen | M-2000 Thickness (nm) | Cauchy | Cauchy (μm2) | EMA Roughness (nm) | Max. |Δn/n| (%) |
|---|---|---|---|---|---|
| S1 | 381.74 ± 0.18 | 1.4491590 | 0.003494059 | 1.744 | 0.0847 |
| S2 | 448.38 ± 0.18 | 1.4485654 | 0.003595880 | 1.467 | 0.0583 |
| S3 | 521.46 ± 0.29 | 1.4476501 | 0.003491001 | 0.999 | 0.0494 |
| S4 | 602.20 ± 0.33 | 1.4469905 | 0.003578737 | 1.114 | 0.0759 |
| S5 | 678.67 ± 0.15 | 1.4488996 | 0.003513860 | 1.351 | 0.0691 |
| Specimen | Ellipsometry Reference (nm) | Robust-Anchor Mean ± SD (nm) | Final Mean ± SD (nm) | Anchor AE (nm) | Final AE (nm) | Accepted Positions |
|---|---|---|---|---|---|---|
| S1 | 381.74 | 381.25 ± 0.66 | 381.42 ± 0.22 | 0.49 | 0.32 | 2/3 |
| S2 | 448.38 | 447.58 ± 0.56 | 447.72 ± 0.19 | 0.80 | 0.66 | 2/3 |
| S3 | 521.46 | 520.83 ± 0.28 | 520.90 ± 0.16 | 0.63 | 0.56 | 1/3 |
| S4 | 602.20 | 602.62 ± 0.49 | 602.45 ± 0.34 | 0.42 | 0.25 | 2/3 |
| S5 | 678.67 | 678.89 ± 0.36 | 678.76 ± 0.24 | 0.22 | 0.09 | 1/3 |
| Specimen-level MAE (unrounded) | — | — | — | 0.512 | 0.374 | 8/15 |
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Wu, G.; Huang, Y.; Ma, W.; Zhang, Z.; Yang, L.; Zheng, H. An Improved Robust Multibasin Profiling Framework with Physics-Protected Selective Structured-Residual Refinement for Thin-Film Thickness Inversion. Photonics 2026, 13, 882. https://doi.org/10.3390/photonics13090882
Wu G, Huang Y, Ma W, Zhang Z, Yang L, Zheng H. An Improved Robust Multibasin Profiling Framework with Physics-Protected Selective Structured-Residual Refinement for Thin-Film Thickness Inversion. Photonics. 2026; 13(9):882. https://doi.org/10.3390/photonics13090882
Chicago/Turabian StyleWu, Guangshuo, Yixuan Huang, Wenhui Ma, Zhi Zhang, Lihan Yang, and Hao Zheng. 2026. "An Improved Robust Multibasin Profiling Framework with Physics-Protected Selective Structured-Residual Refinement for Thin-Film Thickness Inversion" Photonics 13, no. 9: 882. https://doi.org/10.3390/photonics13090882
APA StyleWu, G., Huang, Y., Ma, W., Zhang, Z., Yang, L., & Zheng, H. (2026). An Improved Robust Multibasin Profiling Framework with Physics-Protected Selective Structured-Residual Refinement for Thin-Film Thickness Inversion. Photonics, 13(9), 882. https://doi.org/10.3390/photonics13090882

