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Gao S, Vu D-T, Cazimajou T, Pittet P, Le Berre M, Dolatpoor Lakeh M, Mandorlo F, Orobtchouk R, Schell J-B, Kammerer J-B, et al. Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology. Photonics. 2024; 11(6):526. https://doi.org/10.3390/photonics11060526

Gao, Shaochen, Duc-Tung Vu, Thibauld Cazimajou, Patrick Pittet, Martine Le Berre, Mohammadreza Dolatpoor Lakeh, Fabien Mandorlo, Régis Orobtchouk, Jean-Baptiste Schell, Jean-Baptiste Kammerer, and et al. 2024. "Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology" Photonics 11, no. 6: 526. https://doi.org/10.3390/photonics11060526

Gao, S., Vu, D.-T., Cazimajou, T., Pittet, P., Le Berre, M., Dolatpoor Lakeh, M., Mandorlo, F., Orobtchouk, R., Schell, J.-B., Kammerer, J.-B., Cathelin, A., Golanski, D., Uhring, W., & Calmon, F. (2024). Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology. Photonics, 11(6), 526. https://doi.org/10.3390/photonics11060526