Shen, M.; Wei, M.; Li, X.; Yuan, J.; Hang, W.; Han, Y.
Atmospheric Plasma Etching-Assisted Chemical Mechanical Polishing for 4H-SiC: Parameter Optimization and Surface Mechanism Analysis. Processes 2025, 13, 2550.
https://doi.org/10.3390/pr13082550
AMA Style
Shen M, Wei M, Li X, Yuan J, Hang W, Han Y.
Atmospheric Plasma Etching-Assisted Chemical Mechanical Polishing for 4H-SiC: Parameter Optimization and Surface Mechanism Analysis. Processes. 2025; 13(8):2550.
https://doi.org/10.3390/pr13082550
Chicago/Turabian Style
Shen, Mengmeng, Min Wei, Xuelai Li, Julong Yuan, Wei Hang, and Yunxiao Han.
2025. "Atmospheric Plasma Etching-Assisted Chemical Mechanical Polishing for 4H-SiC: Parameter Optimization and Surface Mechanism Analysis" Processes 13, no. 8: 2550.
https://doi.org/10.3390/pr13082550
APA Style
Shen, M., Wei, M., Li, X., Yuan, J., Hang, W., & Han, Y.
(2025). Atmospheric Plasma Etching-Assisted Chemical Mechanical Polishing for 4H-SiC: Parameter Optimization and Surface Mechanism Analysis. Processes, 13(8), 2550.
https://doi.org/10.3390/pr13082550