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Chemosensors 2016, 4(4), 20;

Recent Trends in Field-Effect Transistors-Based Immunosensors

Department of Analytical Chemistry, Institute of Chemistry, University of Campinas, P.O. Box 6154, Campinas, São Paulo 13083-970, Brazil
Author to whom correspondence should be addressed.
Academic Editors: Paolo Ugo and Ligia Moretto
Received: 29 July 2016 / Revised: 2 October 2016 / Accepted: 12 October 2016 / Published: 21 October 2016
(This article belongs to the Special Issue Electrochemical Immunosensors and Aptasensors)
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Immunosensors are analytical platforms that detect specific antigen-antibody interactions and play an important role in a wide range of applications in biomedical clinical diagnosis, food safety, and monitoring contaminants in the environment. Field-effect transistors (FET) immunosensors have been developed as promising alternatives to conventional immunoassays, which require complicated processes and long-time data acquisition. The electrical signal of FET-based immunosensors is generated as a result of the antigen-antibody conjugation. FET biosensors present real-time and rapid response, require small sample volume, and exhibit higher sensitivity and selectivity. This review brings an overview on the recent literature of FET-based immunosensors, highlighting a diversity of nanomaterials modified with specific receptors as immunosensing platforms for the ultrasensitive detection of various biomolecules. View Full-Text
Keywords: biosensors; immunosensors; field-effect transistors; immunoFET; antigen-antibody; nanomaterials biosensors; immunosensors; field-effect transistors; immunoFET; antigen-antibody; nanomaterials

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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de Moraes, A.C.M.; Kubota, L.T. Recent Trends in Field-Effect Transistors-Based Immunosensors. Chemosensors 2016, 4, 20.

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