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Recent Trends in Field-Effect Transistors-Based Immunosensors

Department of Analytical Chemistry, Institute of Chemistry, University of Campinas, P.O. Box 6154, Campinas, São Paulo 13083-970, Brazil
Author to whom correspondence should be addressed.
Academic Editors: Paolo Ugo and Ligia Moretto
Chemosensors 2016, 4(4), 20;
Received: 29 July 2016 / Revised: 2 October 2016 / Accepted: 12 October 2016 / Published: 21 October 2016
(This article belongs to the Special Issue Electrochemical Immunosensors and Aptasensors)
Immunosensors are analytical platforms that detect specific antigen-antibody interactions and play an important role in a wide range of applications in biomedical clinical diagnosis, food safety, and monitoring contaminants in the environment. Field-effect transistors (FET) immunosensors have been developed as promising alternatives to conventional immunoassays, which require complicated processes and long-time data acquisition. The electrical signal of FET-based immunosensors is generated as a result of the antigen-antibody conjugation. FET biosensors present real-time and rapid response, require small sample volume, and exhibit higher sensitivity and selectivity. This review brings an overview on the recent literature of FET-based immunosensors, highlighting a diversity of nanomaterials modified with specific receptors as immunosensing platforms for the ultrasensitive detection of various biomolecules. View Full-Text
Keywords: biosensors; immunosensors; field-effect transistors; immunoFET; antigen-antibody; nanomaterials biosensors; immunosensors; field-effect transistors; immunoFET; antigen-antibody; nanomaterials
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MDPI and ACS Style

De Moraes, A.C.M.; Kubota, L.T. Recent Trends in Field-Effect Transistors-Based Immunosensors. Chemosensors 2016, 4, 20.

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