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Open AccessArticle

Failure Estimates for SiC Power MOSFETs in Space Electronics

1
Institute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USA
2
Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USA
3
Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, Finland
4
NASA Goddard Space Flight Center, Code 561.4, Greenbelt, MD 20771, USA
*
Author to whom correspondence should be addressed.
Aerospace 2018, 5(3), 67; https://doi.org/10.3390/aerospace5030067
Received: 27 April 2018 / Revised: 7 June 2018 / Accepted: 20 June 2018 / Published: 22 June 2018
(This article belongs to the Special Issue Challenges in Reliability Analysis of Aerospace Electronics)
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. View Full-Text
Keywords: single event effects; heavy ions; silicon carbide; single-event burnout; power devices; power MOSFETs; reliability; failure rates single event effects; heavy ions; silicon carbide; single-event burnout; power devices; power MOSFETs; reliability; failure rates
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Galloway, K.F.; Witulski, A.F.; Schrimpf, R.D.; Sternberg, A.L.; Ball, D.R.; Javanainen, A.; Reed, R.A.; Sierawski, B.D.; Lauenstein, J.-M. Failure Estimates for SiC Power MOSFETs in Space Electronics. Aerospace 2018, 5, 67.

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