Next Article in Journal
PAPR Reduction in UFMC for 5G Cellular Systems
Next Article in Special Issue
Partial Isolation Type Buried Channel Array Transistor (Pi-BCAT) for a Sub-20 nm DRAM Cell Transistor
Previous Article in Journal
Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
 
 
Article

Article Versions Notes

Electronics 2020, 9(9), 1403; https://doi.org/10.3390/electronics9091403
Action Date Notes Link
article xml file uploaded 30 August 2020 11:47 CEST Original file -
article xml uploaded. 30 August 2020 11:47 CEST Update -
article pdf uploaded. 30 August 2020 11:47 CEST Version of Record https://www.mdpi.com/2079-9292/9/9/1403/pdf-vor
article html file updated 30 August 2020 11:49 CEST Original file -
article xml file uploaded 31 August 2020 04:16 CEST Update -
article xml uploaded. 31 August 2020 04:16 CEST Update https://www.mdpi.com/2079-9292/9/9/1403/xml
article pdf uploaded. 31 August 2020 04:16 CEST Updated version of record https://www.mdpi.com/2079-9292/9/9/1403/pdf
article html file updated 31 August 2020 05:07 CEST Update https://www.mdpi.com/2079-9292/9/9/1403/html
Back to TopTop