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Electronics
Volume 9
Issue 8
10.3390/electronics9081228
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Journal: Electronics, 2020
Volume: 9
Number: 1228

Article: Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application
Authors: by Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho and Byung-Gook Park
Link: https://www.mdpi.com/2079-9292/9/8/1228

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