Salas-RodrÃguez, S.; López-Huerta, F.; Herrera-May, A.L.; Molina-Reyes, J.; MartÃnez-Castillo, J.
Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States. Electronics 2020, 9, 1016.
https://doi.org/10.3390/electronics9061016
AMA Style
Salas-RodrÃguez S, López-Huerta F, Herrera-May AL, Molina-Reyes J, MartÃnez-Castillo J.
Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States. Electronics. 2020; 9(6):1016.
https://doi.org/10.3390/electronics9061016
Chicago/Turabian Style
Salas-RodrÃguez, Silvestre, Francisco López-Huerta, AgustÃn L. Herrera-May, Joel Molina-Reyes, and Jaime MartÃnez-Castillo.
2020. "Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States" Electronics 9, no. 6: 1016.
https://doi.org/10.3390/electronics9061016
APA Style
Salas-RodrÃguez, S., López-Huerta, F., Herrera-May, A. L., Molina-Reyes, J., & MartÃnez-Castillo, J.
(2020). Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States. Electronics, 9(6), 1016.
https://doi.org/10.3390/electronics9061016