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Volume 9
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Article

Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States

by
Silvestre Salas-Rodríguez
1,
Francisco López-Huerta
2,3,
Agustín L. Herrera-May
1,3,
Joel Molina-Reyes
4 and
Jaime Martínez-Castillo
1,*
1
Research Center in Micro and Nanotechnology, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, Mexico
2
Faculty of Electrical and Electronic Engineering, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, Mexico
3
Master in Applied Engineering, Faculty of Construction and Habitat Engineering, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, Mexico
4
Electronic Department, National Institute of Astrophysics, Optics and Electronics (INAOE), Luis Enrique Erro 1, Santa María Tonanzintla, Puebla 72840, Mexico
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(6), 1016; https://doi.org/10.3390/electronics9061016
Submission received: 27 May 2020 / Revised: 15 June 2020 / Accepted: 16 June 2020 / Published: 18 June 2020
(This article belongs to the Special Issue New CMOS Devices and Their Applications)
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Abstract

Thin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, including deposition at low temperatures and low pressures, and higher carrier mobilities. Due to these advantages, the a-SiGe:H films can be used in the fabrication of TFTs. In this work, we present an analytical drain current model for a-SiGe:H TFTs considering density of states and free charges, which describes the current behavior at sub-and above- threshold region. In addition, 2D numerical simulations of a-SiGe:H TFTs are developed. The results of the analytical drain current model agree well with those of the 2D numerical simulations. For all characteristics of the drain current curves, the average absolute error of the analytical model is close to 5.3%. This analytical drain current model can be useful to estimate the performance of a-SiGe:H TFTs for applications in large area electronics.
Keywords: a-SiGe:H; density of states; current model; thin film transistor; simulations a-SiGe:H; density of states; current model; thin film transistor; simulations

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MDPI and ACS Style

Salas-Rodríguez, S.; López-Huerta, F.; Herrera-May, A.L.; Molina-Reyes, J.; Martínez-Castillo, J. Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States. Electronics 2020, 9, 1016. https://doi.org/10.3390/electronics9061016

AMA Style

Salas-Rodríguez S, López-Huerta F, Herrera-May AL, Molina-Reyes J, Martínez-Castillo J. Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States. Electronics. 2020; 9(6):1016. https://doi.org/10.3390/electronics9061016

Chicago/Turabian Style

Salas-Rodríguez, Silvestre, Francisco López-Huerta, Agustín L. Herrera-May, Joel Molina-Reyes, and Jaime Martínez-Castillo. 2020. "Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States" Electronics 9, no. 6: 1016. https://doi.org/10.3390/electronics9061016

APA Style

Salas-Rodríguez, S., López-Huerta, F., Herrera-May, A. L., Molina-Reyes, J., & Martínez-Castillo, J. (2020). Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States. Electronics, 9(6), 1016. https://doi.org/10.3390/electronics9061016

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