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Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress
 
 
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Electronics 2020, 9(12), 2040; https://doi.org/10.3390/electronics9122040
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