Rodríguez-Benítez, O.M.; Ponce-Silva, M.; Aquí-Tapia, J.A.; Claudio-Sánchez, A.; Vela-Váldes, L.G.; Lozoya-Ponce, R.E.; Cortés-García, C.
Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices. Electronics 2020, 9, 1982.
https://doi.org/10.3390/electronics9111982
AMA Style
Rodríguez-Benítez OM, Ponce-Silva M, Aquí-Tapia JA, Claudio-Sánchez A, Vela-Váldes LG, Lozoya-Ponce RE, Cortés-García C.
Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices. Electronics. 2020; 9(11):1982.
https://doi.org/10.3390/electronics9111982
Chicago/Turabian Style
Rodríguez-Benítez, Oscar Miguel, Mario Ponce-Silva, Juan Antonio Aquí-Tapia, Abraham Claudio-Sánchez, Luis Gerardo Vela-Váldes, Ricardo Eliu Lozoya-Ponce, and Claudia Cortés-García.
2020. "Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices" Electronics 9, no. 11: 1982.
https://doi.org/10.3390/electronics9111982
APA Style
Rodríguez-Benítez, O. M., Ponce-Silva, M., Aquí-Tapia, J. A., Claudio-Sánchez, A., Vela-Váldes, L. G., Lozoya-Ponce, R. E., & Cortés-García, C.
(2020). Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices. Electronics, 9(11), 1982.
https://doi.org/10.3390/electronics9111982
