Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs
AbstractThis paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices. View Full-Text
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Caddemi, A.; Cardillo, E.; Patanè, S.; Triolo, C. Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs. Electronics 2019, 8, 698.
Caddemi A, Cardillo E, Patanè S, Triolo C. Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs. Electronics. 2019; 8(6):698.Chicago/Turabian Style
Caddemi, Alina; Cardillo, Emanuele; Patanè, Salvatore; Triolo, Claudia. 2019. "Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs." Electronics 8, no. 6: 698.
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