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Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs

1
Department of Engineering, University of Messina, 98166 Messina, Italy
2
Dipartimento di Scienze Matematiche e Informatiche, Scienze Fisiche e Scienze della Terra, University of Messina, 98166 Messina, Italy
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(6), 698; https://doi.org/10.3390/electronics8060698
Received: 14 May 2019 / Revised: 14 June 2019 / Accepted: 19 June 2019 / Published: 21 June 2019
(This article belongs to the Section Microwave and Wireless Communications)
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PDF [7235 KB, uploaded 21 June 2019]
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Abstract

This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices. View Full-Text
Keywords: GaN HEMT; optical behavior; light exposure; laser; kink effect GaN HEMT; optical behavior; light exposure; laser; kink effect
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Caddemi, A.; Cardillo, E.; Patanè, S.; Triolo, C. Light Exposure Effects on the DC Kink of AlGaN/GaN HEMTs. Electronics 2019, 8, 698.

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