Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)
Abstract
1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Electronic Transport with Dielectric Gate
3.2. Electronic Transport with an Electric Double Layer Gate
3.3. Electronic Transport with Ion-Gel Gate
3.4. Electronic Transport with a Dual Gate
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
- Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150. [Google Scholar] [CrossRef] [PubMed]
- Miró, P.; Audiffred, M.; Heine, T. An atlas of two-dimensional materials. Chem. Soc. Rev. 2014, 43, 6537–6554. [Google Scholar] [CrossRef] [PubMed]
- Wasala, M.; Sirikumara, H.I.; Raj Sapkota, Y.; Hofer, S.; Mazumdar, D.; Jayasekera, T.; Talapatra, S. Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds. J. Mater. Chem. C 2017, 5, 11214–11225. [Google Scholar] [CrossRef]
- Wang, B.; Huang, W.; Chi, L.; Al-Hashimi, M.; Marks, T.J.; Facchetti, A. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics. Chem. Rev. 2018, 118, 5690–5754. [Google Scholar] [CrossRef] [PubMed]
- Ye, M.; Zhang, D.; Yap, Y.K. Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides. Electronics 2017, 6, 43. [Google Scholar]
- Du, H.; Lin, X.; Xu, Z.; Chu, D. Electric double-layer transistors: A review of recent progress. J. Mater. Sci. 2015, 50, 5641–5673. [Google Scholar] [CrossRef]
- Wang, D.; Noël, V.; Piro, B. Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review. Electronics 2016, 5, 9. [Google Scholar] [CrossRef]
- Fujimoto, T.; Awaga, K. Electric-double-layer field-effect transistors with ionic liquids. Phys. Chem. Chem. Phys. 2013, 15, 8983–9006. [Google Scholar] [CrossRef]
- Armand, M.; Endres, F.; MacFarlane, D.R.; Ohno, H.; Scrosati, B. Ionic-liquid materials for the electrochemical challenges of the future. Nat. Mater. 2009, 8, 621. [Google Scholar] [CrossRef]
- Watanabe, M.; Thomas, M.L.; Zhang, S.; Ueno, K.; Yasuda, T.; Dokko, K. Application of Ionic Liquids to Energy Storage and Conversion Materials and Devices. Chem. Rev. 2017, 117, 7190–7239. [Google Scholar] [CrossRef]
- Bisri, S.Z.; Shimizu, S.; Nakano, M.; Iwasa, Y. Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics. Adv. Mater. 2017, 29, 1607054. [Google Scholar] [CrossRef] [PubMed]
- Huffstutler, J.D.; Wasala, M.; Richie, J.; Barron, J.; Winchester, A.; Ghosh, S.; Yang, C.; Xu, W.; Song, L.; Kar, S.; et al. High Performance Graphene-Based Electrochemical Double Layer Capacitors Using 1-Butyl-1-methylpyrrolidinium tris (pentafluoroethyl) trifluorophosphate Ionic Liquid as an Electrolyte. Electronics 2018, 7, 229. [Google Scholar] [CrossRef]
- Ye, J.T.; Inoue, S.; Kobayashi, K.; Kasahara, Y.; Yuan, H.T.; Shimotani, H.; Iwasa, Y. Liquid-gated interface superconductivity on an atomically flat film. Nat. Mater. 2009, 9, 125–128. [Google Scholar] [CrossRef] [PubMed]
- Saito, Y.; Iwasa, Y. Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating. ACS Nano 2015, 9, 3192–3198. [Google Scholar] [CrossRef] [PubMed]
- Yamada, Y.; Ueno, K.; Fukumura, T.; Yuan, H.T.; Shimotani, H.; Iwasa, Y.; Gu, L.; Tsukimoto, S.; Ikuhara, Y.; Kawasaki, M. Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide. Science 2011, 332, 1065–1067. [Google Scholar] [CrossRef] [PubMed]
- Perera, M.M.; Lin, M.-W.; Chuang, H.-J.; Chamlagain, B.P.; Wang, C.; Tan, X.; Cheng, M.M.-C.; Tománek, D.; Zhou, Z. Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating. ACS Nano 2013, 7, 4449–4458. [Google Scholar] [CrossRef] [PubMed]
- Jo, S.; Costanzo, D.; Berger, H.; Morpurgo, A.F. Electrostatically Induced Superconductivity at the Surface of WS2. Nano Lett. 2015, 15, 1197–1202. [Google Scholar] [CrossRef]
- Lu, J.M.; Zheliuk, O.; Leermakers, I.; Yuan, N.F.Q.; Zeitler, U.; Law, K.T.; Ye, J.T. Evidence for two-dimensional Ising superconductivity in gated MoS2. Science 2015, 350, 1353–1357. [Google Scholar] [CrossRef]
- Lu, J.; Zheliuk, O.; Chen, Q.; Leermakers, I.; Hussey, N.E.; Zeitler, U.; Ye, J. Full superconducting dome of strong Ising protection in gated monolayer WS2. Proc. Natl. Acad. Sci. USA 2018, 115, 3551–3556. [Google Scholar] [CrossRef]
- Saito, Y.; Nojima, T.; Iwasa, Y. Highly crystalline 2D superconductors. Nat. Rev. Mater. 2016, 2, 16094. [Google Scholar] [CrossRef]
- Schwierz, F.; Pezoldt, J.; Granzner, R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale 2015, 7, 8261–8283. [Google Scholar] [CrossRef] [PubMed]
- Li, S.-L.; Tsukagoshi, K.; Orgiu, E.; Samorì, P. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. Chem. Soc. Rev. 2016, 45, 118–151. [Google Scholar] [CrossRef] [PubMed]
- Ghosh, S.; Wasala, M.; Pradhan, N.R.; Rhodes, D.; Patil, P.D.; Fralaide, M.; Xin, Y.; McGill, S.A.; Balicas, L.; Talapatra, S. Low temperature photoconductivity of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs). Nanotechnology 2018, 29, 484002. [Google Scholar] [CrossRef] [PubMed]
- Lin, Z.; McCreary, A.; Briggs, N.; Subramanian, S.; Zhang, K.; Sun, Y.; Li, X.; Borys, N.J.; Yuan, H.; Fullerton-Shirey, S.K.; et al. 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications. 2D Mater. 2016, 3, 042001. [Google Scholar] [CrossRef]
- Wang, L.; Hu, P.; Long, Y.; Liu, Z.; He, X. Recent advances in ternary two-dimensional materials: Synthesis, properties and applications. J. Mater. Chem. A 2017, 5, 22855–22876. [Google Scholar] [CrossRef]
- Stanbery, B.J. Copper Indium Selenides and Related Materials for Photovoltaic Devices. Crit. Rev. Solid State Mater. Sci. 2002, 27, 73–117. [Google Scholar] [CrossRef]
- Lei, S.; Sobhani, A.; Wen, F.; George, A.; Wang, Q.; Huang, Y.; Dong, P.; Li, B.; Najmaei, S.; Bellah, J.; et al. Ternary CuIn7Se11: Towards Ultra-Thin Layered Photodetectors and Photovoltaic Devices. Adv. Mater. 2014, 26, 7666–7672. [Google Scholar] [CrossRef] [PubMed]
- Ghosh, S.; Patil, P.D.; Wasala, M.; Lei, S.; Nolander, A.; Sivakumar, P.; Vajtai, R.; Ajayan, P.; Talapatra, S. Fast photoresponse and high detectivity in copper indium selenide (CuIn7Se11) phototransistors. 2D Mater. 2017, 5, 015001. [Google Scholar] [CrossRef]
- Fujimoto, T.; Matsushita, M.M.; Awaga, K. Ionic-Liquid Component Dependence of Carrier Injection and Mobility for Electric-Double-Layer Organic Thin-Film Transistors. J. Phys. Chem. C 2012, 116, 5240–5245. [Google Scholar] [CrossRef]
- Das, S.; Chen, H.-Y.; Penumatcha, A.V.; Appenzeller, J. High Performance Multilayer MoS2 Transistors with Scandium Contacts. Nano Lett. 2013, 13, 100–105. [Google Scholar] [CrossRef]
- Lin, M.-W.; Kravchenko, I.I.; Fowlkes, J.; Li, X.; Puretzky, A.A.; Rouleau, C.M.; Geohegan, D.B.; Xiao, K. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors. Nanotechnology 2016, 27, 165203. [Google Scholar] [CrossRef] [PubMed]
- Li, S.-L.; Wakabayashi, K.; Xu, Y.; Nakaharai, S.; Komatsu, K.; Li, W.-W.; Lin, Y.-F.; Aparecido-Ferreira, A.; Tsukagoshi, K. Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors. Nano Lett. 2013, 13, 3546–3552. [Google Scholar] [CrossRef] [PubMed]
- Island, J.O.; Blanter, S.I.; Buscema, M.; van der Zant, H.S.J.; Castellanos-Gomez, A. Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors. Nano Lett. 2015, 15, 7853–7858. [Google Scholar] [CrossRef] [PubMed]
- Zhou, J.; Zeng, Q.; Lv, D.; Sun, L.; Niu, L.; Fu, W.; Liu, F.; Shen, Z.; Jin, C.; Liu, Z. Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition. Nano Lett. 2015, 15, 6400–6405. [Google Scholar] [CrossRef] [PubMed]
- Tamalampudi, S.R.; Lu, Y.-Y.; Kumar, U.R.; Sankar, R.; Liao, C.-D.; Moorthy, B.K.; Cheng, C.-H.; Chou, F.C.; Chen, Y.-T. High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response. Nano Lett. 2014, 14, 2800–2806. [Google Scholar] [CrossRef] [PubMed]
- Feng, W.; Wu, J.-B.; Li, X.; Zheng, W.; Zhou, X.; Xiao, K.; Cao, W.; Yang, B.; Idrobo, J.-C.; Basile, L.; et al. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. J. Mater. Chem. C 2015, 3, 7022–7028. [Google Scholar] [CrossRef]
- Yang, S.; Yue, Q.; Cai, H.; Wu, K.; Jiang, C.; Tongay, S. Highly efficient gas molecule-tunable few-layer GaSe phototransistors. J. Mater. Chem. C 2016, 4, 248–253. [Google Scholar] [CrossRef]
- Kalb, W.L.; Batlogg, B. Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods. Phys. Rev. B 2010, 81, 035327. [Google Scholar] [CrossRef]
- Zebrev, G.I.; Melnik, E.V.; Tselykovskiy, A.A. Interface Traps in Graphene Field-Effect Devices: Extraction Methods and Influence on Characteristics. In Graphene Science Handbook: Size-Dependent Properties; Aliofkhazraei, M., Ali, N., Milne, W.I., Ozkan, C., Mitura, S.S., Gervasoni, J.L., Eds.; CRC Press: Boca Raton, FL, USA, 2016; Volume 5, p. 14. [Google Scholar]
- Late, D.J.; Liu, B.; Matte, H.R.; Dravid, V.P.; Rao, C.N. Hysteresis in Single-Layer MoS2 Field Effect Transistors. ACS Nano 2012, 6, 5635–5641. [Google Scholar] [CrossRef]
- Zhang, Y.; Ye, J.; Matsuhashi, Y.; Iwasa, Y. Ambipolar MoS2 Thin Flake Transistors. Nano Lett. 2012, 12, 1136–1140. [Google Scholar] [CrossRef]
- Yuan, H.; Shimotani, H.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Iwasa, Y. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids. Adv. Funct. Mater. 2009, 19, 1046–1053. [Google Scholar] [CrossRef]
- Zhou, Y.; Ramanathan, S. Relaxation dynamics of ionic liquid—VO2 interfaces and influence in electric double-layer transistors. J. Appl. Phys. 2012, 111, 084508. [Google Scholar] [CrossRef]
- Singh, M.; Manoli, K.; Tiwari, A.; Ligonzo, T.; Di Franco, C.; Cioffi, N.; Palazzo, G.; Scamarcio, G.; Torsi, L. The double layer capacitance of ionic liquids for electrolyte gating of ZnO thin film transistors and effect of gate electrodes. J. Mater. Chem. C 2017, 5, 3509–3518. [Google Scholar] [CrossRef]
- Almora, O.; Aranda, C.; Mas-Marzá, E.; Garcia-Belmonte, G. On Mott–Schottky analysis interpretation of capacitance measurements in organometal perovskite solar cells. Appl. Phys. Lett. 2016, 109, 173903. [Google Scholar] [CrossRef]
- Lockett, V.; Horne, M.; Sedev, R.; Rodopoulos, T.; Ralston, J. Differential capacitance of the double layer at the electrode/ionic liquids interface. Phys. Chem. Chem. Phys. 2010, 12, 12499–12512. [Google Scholar] [CrossRef] [PubMed]
- Sze, S.M.; Ng, K.K. Physics of Semiconductor Devices; John Wiley & Sons: Hoboken, NJ, USA, 2007. [Google Scholar]
- Kim, S.; Nah, J.; Jo, I.; Shahrjerdi, D.; Colombo, L.; Yao, Z.; Tutuc, E.; Banerjee, S.K. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric. Appl. Phys. Lett. 2009, 94, 062107. [Google Scholar] [CrossRef]
- Hwang, B.-W.; Yeom, H.-I.; Kim, D.; Kim, C.-K.; Lee, D.; Choi, Y.-K. Enhanced transconductance in a double-gate graphene field-effect transistor. Solid-State Electron. 2018, 141, 65–68. [Google Scholar] [CrossRef]
- Zhu, W.; Low, T.; Farmer, D.B.; Jenkins, K.; Ek, B.; Avouris, P. Effect of dual gate control on the alternating current performance of graphene radio frequency device. J. Appl. Phys. 2013, 114, 044307. [Google Scholar] [CrossRef]
- Lee, G.-H.; Cui, X.; Kim, Y.D.; Arefe, G.; Zhang, X.; Lee, C.-H.; Ye, F.; Watanabe, K.; Taniguchi, T.; Kim, P.; et al. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. ACS Nano 2015, 9, 7019–7026. [Google Scholar] [CrossRef]
- Miyazaki, H.; Tsukagoshi, K.; Kanda, A.; Otani, M.; Okada, S. Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field. Nano Lett. 2010, 10, 3888–3892. [Google Scholar] [CrossRef]
Device # | μFE (cm2 V−1 s−1) | SS (V/dec) | on/off ratio | |||
---|---|---|---|---|---|---|
BG | TG | BG | TG | BG | TG | |
Device I | 4.04 | 21.84 | 9.6 | 0.30 | ~103 | ~104 |
Device II | 2.66 | 17.73 | 29.8 | 0.19 | ~102 | ~104 |
† Device III | 0.23 | 0.42 | 107 | 0.81 | ~100 | ~103 |
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Patil, P.D.; Ghosh, S.; Wasala, M.; Lei, S.; Vajtai, R.; Ajayan, P.M.; Talapatra, S. Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11). Electronics 2019, 8, 645. https://doi.org/10.3390/electronics8060645
Patil PD, Ghosh S, Wasala M, Lei S, Vajtai R, Ajayan PM, Talapatra S. Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11). Electronics. 2019; 8(6):645. https://doi.org/10.3390/electronics8060645
Chicago/Turabian StylePatil, Prasanna D., Sujoy Ghosh, Milinda Wasala, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, and Saikat Talapatra. 2019. "Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)" Electronics 8, no. 6: 645. https://doi.org/10.3390/electronics8060645
APA StylePatil, P. D., Ghosh, S., Wasala, M., Lei, S., Vajtai, R., Ajayan, P. M., & Talapatra, S. (2019). Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11). Electronics, 8(6), 645. https://doi.org/10.3390/electronics8060645