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Open AccessArticle

A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power

1
School of Electrical Engineering, Chungbuk National University, Cheongju 28644, Korea
2
Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(11), 1228; https://doi.org/10.3390/electronics8111228
Received: 24 September 2019 / Revised: 15 October 2019 / Accepted: 24 October 2019 / Published: 27 October 2019
(This article belongs to the Special Issue Smart Electrical Circuits and Systems for Neural Interface)
The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is −2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage. View Full-Text
Keywords: oscillator; mm-wave; high output power; CMOS oscillator; mm-wave; high output power; CMOS
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Nguyen, T.D.; Park, H.; Hong, J.-P. A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power. Electronics 2019, 8, 1228.

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