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Journal: Electronics, 2019
Volume: 8
Number: 1203
Article:
Nanoseconds Switching Time Monitoring of Insulated Gate Bipolar Transistor Module by Under-Sampling Reconstruction of High-Speed Switching Transitions Signal
Authors:
by
Hao Li, Meng Zhao, Hao Yan and Xingwu Yang
Link:
https://www.mdpi.com/2079-9292/8/10/1203
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